Graphene Electrode Capacitor for High Charge Density
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Solution Overview
Problem
Conventional capacitors with metallic electrodes have limited charge storage capacity per unit area, requiring high-k dielectric materials and expensive formation techniques like atomic layer deposition, which increase costs and reduce throughput.
Innovation Solution
The use of graphene structures with multiple layers as electrodes, separated by a dielectric layer, enhances charge carrier storage per unit area, reducing the need for high-k dielectric materials and atomic layer deposition, while allowing for tuning of capacitance by adjusting the number of graphene layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If metallic electrodes (Al or Cu) are used in MOM or MIM capacitors, then the capacitor structure is simple and manufacturing is easy, but the charge storage capacity per unit area is limited (less than 100 fF/μm2)
Solution Approach 1:
The patent changes the material parameter of the electrode from conventional metals (Al, Cu) to graphene, which has fundamentally different electrical properties. Graphene's high carrier mobility and unique two-dimensional structure enable much higher charge storage capacity per unit area, directly resolving the contradiction between storage capacity and area.
Solution Approach 2:
The patent employs a composite structure combining multiple graphene layers with dielectric materials (such as HfO2, SiO2, or high-k dielectrics) to form a multi-layer capacitor structure. This composite approach leverages the high capacitance density of graphene while utilizing dielectric materials to enhance charge storage, achieving over 100 fF/μm2 without proportionally increasing area.
2Quantity of substance
If high-k dielectric materials are used to increase storage ability per unit area, then charge storage capacity improves, but manufacturing complexity and cost increase due to requiring atomic layer deposition
Solution Approach 1:
The patent changes the electrode material parameter to graphene, which inherently provides high charge storage capacity without requiring extreme dielectric constants. This parameter change allows the use of standard dielectric materials and conventional deposition techniques, reducing manufacturing complexity while maintaining high storage capacity.
Solution Approach 2:
The patent replaces expensive, complex manufacturing processes (atomic layer deposition of high-k dielectrics) with more economical alternatives. By using graphene electrodes that work effectively with standard dielectric materials and conventional deposition methods, the manufacturing process becomes simpler and more cost-effective while achieving the desired charge storage capacity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases charge storage capacity, reduces the size of semiconductor devices, lowers manufacturing costs, and improves throughput by utilizing graphene electrodes that resist charge transfer between layers, thereby enhancing overall performance.
Implementation Method 1
a dielectric layer over the first graphene structure
Data Source
AI summary
A capacitor includes a first graphene structure having a first plurality of graphene layers. The capacitor further includes a dielectric layer over the first graphene structure. The capacitor further includes a second graphene structure over the dielectric layer, wherein the second graphene structure has a second plurality of graphene layers.