Graphene-Capped Interconnect Lines With Selective Cobalt Cap Deposition

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Solution Overview

Problem

The challenge of increased resistance and electromigration in metal lines with narrow widths in integrated circuits due to tighter pitches in advanced fabrication processes, leading to performance issues and failure.

Innovation Solution

Implementing a layer of graphene over metal lines, optionally with a conductive cap such as cobalt, to reduce resistance and enhance electromigration reliability by selectively depositing a conductive cap over graphene-capped metal lines or growing graphene over cobalt-capped metal lines.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If metal lines are scaled to narrower widths to accommodate tighter pitches, then increased density of functional units is achieved, but resistance and electromigration increase leading to performance issues and failure

Engineering Contradiction:
Improvemetal line widthVSAvoidelectromigration reliability
Core Design Contradiction:
Area of moving objectVSReliability

Solution Approach 1:

The patent applies composite materials by combining graphene and cobalt in a layered structure (graphene-cobalt composite) to create a cap that leverages the unique properties of both materials: graphene provides low resistance and high electron mobility, while cobalt provides structural stability and electromigration resistance, thereby solving the reliability issues of narrow metal lines

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the physical and chemical parameters of the metal line interface by introducing graphene, which alters the electron scattering characteristics and reduces resistance. The graphene layer modifies the electrical conductivity parameter and the structural integrity parameter, enabling narrow lines to maintain low resistance and high reliability

Inventive Principle:
Principle #35Parameter changes

2Area of moving object

If metal lines are scaled to narrower widths to accommodate tighter pitches, then increased density of functional units is achieved, but resistance increases leading to performance issues

Engineering Contradiction:
Improvemetal line widthVSAvoidresistance
Core Design Contradiction:
Area of moving objectVSLoss of energy

Solution Approach 1:

The graphene-cobalt composite cap reduces resistance by utilizing graphene's exceptional electrical conductivity and high electron mobility. The graphene layer provides a low-resistance pathway for electrons, reducing energy loss and improving signal integrity in narrow metal lines

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The introduction of graphene changes the electrical conductivity parameter of the metal line system. Graphene's high carrier mobility and low scattering rate alter the resistance parameter, enabling narrow lines to maintain low resistance and reduce energy loss

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The combination of graphene and a conductive cap reduces resistance and improves electromigration performance in metal lines, enhancing the reliability and functionality of integrated circuits.

Implementation Method 1

a layer of graphene over the metal line may reduce resistance

Methodology Applied
Scientific EffectElectrical resistance reduction: Electrical Resistance

Implementation Method 2

the metal lines may suffer from poor electromigration performance

Methodology Applied
Scientific EffectElectromigration: Diffusion Barrier

Data Source

PatentUS20250343147A1Selective cap deposition on graphene-capped conductive lines
Publication Date: 2025.11.06 INTEL CORP
  • US20250343147A1 patent drawing
  • US20250343147A1 patent drawing
  • US20250343147A1 patent drawing

AI summary

Disclosed herein are integrated circuit (IC) structures fabricated with selective cap deposition techniques on graphene-capped conductive lines and IC structures and devices with graphene on capped conductive lines. In one example, an IC structure includes an interconnect layer with a conductive line, a conductive cap layer over the conductive line, and a layer of graphene between the conductive line and the conductive cap or a layer of graphene over the conductive cap. In one such example, the layer of graphene may enable lower resistance in the conductive line and the conductive cap may improve electromigration reliability.