Graphene Growth on Non-Conductive Substrates via Catalyst Structuring

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Solution Overview

Problem

Current graphene production methods are cost-intensive and face challenges in producing high-quality graphene directly on large areas of a desired target substrate, often resulting in defects and impurities due to the transfer process.

Innovation Solution

A method involving a substrate with an electrically non-conductive top surface, where a catalyst structure is deposited and used for catalytic growth of graphene directly on the substrate, avoiding transfer and allowing for precise structuring and improved quality by partial removal of the catalyst structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If graphene is grown on an auxiliary structure and then transferred to a target substrate, then graphene can be produced on desired substrates, but the quality of graphene deteriorates due to defects, tears, and impurities introduced during transfer

Engineering Contradiction:
Improvegraphene qualityVSAvoidproduction complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies preliminary action by growing graphene directly on the final target substrate using a catalyst structure as an intermediate medium. The catalyst structure is deposited on the substrate first, then graphene is grown in situ on the catalyst, eliminating the need for subsequent transfer operations. This preliminary positioning of the growth medium on the target substrate resolves the contradiction by maintaining graphene quality while simplifying the manufacturing process.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The catalyst structure serves as an intermediary between the substrate and the graphene layer. It enables direct growth of high-quality graphene on the target substrate by acting as a temporary growth medium that can be selectively removed afterward. This intermediary approach resolves the contradiction by allowing graphene to be produced directly on the desired substrate without compromising quality through transfer operations.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If graphene is produced directly on large areas of target substrate, then transfer steps are eliminated, but production cost increases and manufacturing precision decreases

Engineering Contradiction:
Improveproduction efficiencyVSAvoidgraphene structure quality
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies segmentation by dividing the substrate surface into regions with and without catalyst structure, allowing selective graphene growth only where needed. The catalyst structure is deposited in specific patterns or regions, enabling precise control over where graphene forms. This segmentation resolves the contradiction by maintaining high manufacturing precision through localized growth while improving productivity by avoiding unnecessary growth on entire large areas.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements local quality by creating spatially varying catalyst structures with different properties in different regions. The catalyst structure can be structured to have varying thickness, composition, or pattern density across the substrate, enabling selective and controlled graphene growth in specific areas. This local differentiation resolves the contradiction by ensuring high manufacturing precision in regions where graphene is needed while improving overall productivity by avoiding waste of resources on unnecessary growth areas.

Inventive Principle:
Principle #3Local quality

3Ease of operation

If catalyst structure is completely removed after graphene growth, then substrate accessibility is improved, but graphene structure stability deteriorates

Engineering Contradiction:
Improvesubstrate accessibilityVSAvoidgraphene structure stability
Core Design Contradiction:
Ease of operationVSStrength

Solution Approach 1:

The patent applies partial action by selectively removing only portions of the catalyst structure rather than completely removing it. The catalyst structure is removed from regions where it is not needed, providing substrate accessibility for subsequent processing steps, while retaining the catalyst in regions where it provides mechanical support or electrical contact for the graphene structure. This partial removal resolves the contradiction by maintaining graphene stability where needed while improving ease of operation where catalyst removal is beneficial.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the quality and monocrystalline characteristics of graphene, reduces defects, and enables the production of graphene structures with predefined designs, improving electronic properties and eliminating transfer-related impurities.

Implementation Method 1

a catalyst structure is deposited and used for catalytic growth of graphene directly on the substrate

Methodology Applied
Scientific EffectCatalysis: Catalysis

Implementation Method 2

deposition of a graphene structure on the catalyst structure

Methodology Applied
Scientific EffectChemical Vapor Deposition: Chemical Vapour Deposition

Data Source

PatentUS10563306B2Production method for a layer structure and layer structure
Publication Date: 2020.02.18 ROBERT BOSCH GMBH
  • US10563306B2 patent drawing
  • US10563306B2 patent drawing
  • US10563306B2 patent drawing

AI summary

A production method for a layer structure, including providing a substrate, wherein at least a top surface of the substrate is made from a non-conductive material; depositing a catalyst structure onto the top surface of the substrate; depositing a graphene structure onto the catalyst structure; and at least partially removing the catalyst structure situated between the substrate and the graphene structure.