Dual P-Doped Graphene Conductors for Flexible Electronics

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Solution Overview

Problem

Current transparent electrode materials, such as ITO, face limitations in flexibility, conductivity, and cost, making them unsuitable for next-generation flexible electronic devices, and existing graphene-based solutions struggle to achieve the required balance of high conductivity and transparency.

Innovation Solution

A dual p-doped graphene-based electrical conductor is developed, comprising a substrate with a first conductive layer of graphene and a second conductive layer of metal nanowires, where the graphene surfaces are p-doped with specific p-type dopants to enhance electrical and optical properties, improving conductivity while maintaining high transmittance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If ITO is used as transparent electrode material, then high light transmittance and ease of manufacture are achieved, but flexibility and conductivity are limited

Engineering Contradiction:
Improveease of manufactureVSAvoidflexibility
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the material parameters from conventional ITO to graphene-based materials, fundamentally altering the physical and chemical properties to achieve both flexibility and conductivity. Graphene's unique two-dimensional structure and high electron mobility enable flexible electronic devices while maintaining excellent electrical performance

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures combining graphene with other materials (such as metal nanowires or polymers) to create transparent electrodes that simultaneously achieve flexibility, high conductivity, and high light transmittance, overcoming the limitations of single-material ITO electrodes

Inventive Principle:
Principle #40Composite materials

2Illumination intensity

If ITO is used as transparent electrode material, then high light transmittance is achieved, but conductivity is limited

Engineering Contradiction:
Improvelight transmittanceVSAvoidconductivity
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

The patent utilizes graphene's inherently high electron mobility and adjusts doping levels to optimize conductivity while maintaining high light transmittance. The unique electronic structure of graphene allows for superior electrical performance compared to ITO without sacrificing optical properties

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The dual p-doped graphene-based electrical conductor achieves improved conductivity with low sheet resistance and high light transmittance, making it suitable for applications in flexible electronic devices like touch screen panels and transparent electrodes.

Implementation Method 1

the graphene is p-doped with a p-type dopant

Methodology Applied
Scientific Effectp-type doping: Dopants

Data Source

PatentEP3187473B1Graphene-based electrical conductors and method for manufacturing the same
Publication Date: 2018.06.20 SAMSUNG ELECTRONICS CO LTD
  • EP3187473B1 patent drawingFigure 1~3
  • EP3187473B1 patent drawingFigure 4~5
  • EP3187473B1 patent drawingFigure 6~6(d)

AI summary

The invention concerns an electrical conductor including a substrate, a first conductive layer including graphene, and a second conductive layer including a conductive metal nanowire, wherein the first conductive layer and the second conductive layer are disposed on the substrate, wherein the first conductive layer is disposed between the substrate and the second conductive layer or on the second conductive layer, wherein the first conductive layer has a first surface facing the second conductive layer and a second surface which is opposite to the first surface, and wherein, in the first surface and the second surface, the graphene is p-doped with a p-type dopant.