Graphene Interface for Diamond Nitride Heat Dissipation
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Solution Overview
Problem
The manufacturing cost of nitride semiconductor devices is increased due to the need to remove the heteroepitaxial growth substrate through grinding and chemical mechanical polishing, which is necessary for transferring the nitride semiconductor layer onto a diamond substrate to enhance heat dissipation properties.
Innovation Solution
A nitride semiconductor device is fabricated by forming a graphene layer on a diamond substrate, followed by a nitride semiconductor layer, with additional graphene layers acting as an interface to bond the nitride semiconductor layer to the diamond substrate, eliminating the need for substrate removal and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the heteroepitaxial growth substrate is removed through grinding and CMP to transfer the nitride semiconductor layer onto a diamond substrate, then the heat dissipation property is improved, but the manufacturing cost increases
Solution Approach 1:
A graphene layer is introduced as an intermediary between the nitride semiconductor layer and the diamond substrate. This graphene layer serves as a bonding interface that enables direct transfer of the nitride semiconductor layer onto the diamond substrate without requiring removal of the heteroepitaxial growth substrate through grinding and CMP processes, thereby reducing manufacturing costs while maintaining excellent heat dissipation properties
Solution Approach 2:
The invention changes the bonding interface parameters by using a graphene layer with specific properties (single-atom thickness, high thermal conductivity, lattice matching) instead of traditional amorphous carbon layers or direct bonding methods. This parameter change enables effective thermal transport while simplifying the manufacturing process
2Ease of manufacture
If a graphene layer is used as the bonding interface between the nitride semiconductor layer and the diamond substrate, then the manufacturing cost is reduced, but the thermal conductivity may be compromised
Solution Approach 1:
The invention optimizes the graphene layer parameters by controlling its thickness to be substantially uniform and within a specific range (preferably 1-10 layers), and by ensuring high crystallinity with minimal defects. These parameter changes maintain extremely high thermal conductivity (comparable to or exceeding bulk diamond) while enabling cost-effective manufacturing through simplified bonding processes
Solution Approach 2:
The invention creates a composite interface structure consisting of the graphene layer bonded to both the nitride semiconductor layer and the diamond substrate. This composite structure leverages the complementary properties of graphene (high in-plane thermal conductivity, flexibility, lattice matching) and diamond (extreme thermal conductivity, mechanical strength) to achieve superior overall thermal management performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high heat dissipation properties at a lower cost by utilizing graphene layers with minimal lattice defects and high thermal conductivity, enhancing thermal transport between the nitride semiconductor layer and the diamond substrate.
Implementation Method 1
utilizing graphene layers with minimal lattice defects and high thermal conductivity, enhancing thermal transport between the nitride semiconductor layer and the diamond substrate
Implementation Method 2
the interface layer is formed by bonding the first graphene layer and the second graphene layer to each other
Data Source
AI summary
A nitride semiconductor device includes: a diamond substrate; a first graphene layer provided on the diamond substrate; a second graphene layer provided on the first graphene layer; a nitride semiconductor layer provided on the second graphene layer; and a nitride semiconductor element having an electrode provided on the nitride semiconductor layer, wherein the first and second graphene layers are provided as an interface layer between the diamond substrate and the nitride semiconductor layer.