Semiconductor structure and manufacturing method thereof
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Solution Overview
Problem
Current methods for depositing graphene on dielectric materials in semiconductor manufacturing involve high temperatures or plasma-enhanced processes, which can damage the dielectric materials and lead to device failure due to electromigration and diffusion issues in metal interconnects.
Innovation Solution
A hot wire-chemical vapor deposition (HW-CVD) process is used to form graphene on dielectric materials at temperatures below 400 degrees Celsius, avoiding plasma ion bombardment and ensuring the integrity of the underlying structures by controlling reaction conditions and introducing specific gases like ammonia to promote carbon adsorption and crystallization into a two-dimensional honeycomb lattice.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high temperature or plasma-enhanced processes are used to deposit graphene on dielectric materials, then graphene can be formed, but the dielectric materials are damaged and device reliability deteriorates
Solution Approach 1:
The patent changes the temperature parameter from high temperature (conventional CVD) to low temperature (below 400°C) processing, and switches from plasma-enhanced to thermal CVD method, thereby avoiding thermal damage to dielectric materials while still achieving graphene formation that improves device reliability
Solution Approach 2:
The patent introduces a liner layer (such as silicon nitride or silicon oxynitride) as an intermediary between the dielectric material and the graphene layer, which protects the dielectric material from direct thermal exposure while allowing graphene to form on top, thus resolving the contradiction between graphene formation and dielectric integrity
2Reliability
If conventional CVD methods are used to form graphene, then graphene layers can be deposited, but metal interconnects suffer from electromigration and diffusion issues
Solution Approach 1:
The patent uses a thin liner layer (typically 1-10 nm thick) as a sacrificial protective layer that can be deposited and removed easily, providing temporary protection during graphene formation and preventing metal diffusion without requiring complex structural modifications
Solution Approach 2:
The patent creates a composite structure consisting of dielectric material + liner layer + graphene layer, where each layer serves a specific function: the dielectric provides structural support, the liner prevents thermal damage and metal diffusion, and the graphene enhances electrical conductivity and thermal dissipation
3Object-affected harmful factors
If low temperature processing is used to avoid dielectric damage, then dielectric integrity is maintained, but graphene formation becomes difficult
Solution Approach 1:
The liner layer acts as an intermediary substrate that facilitates graphene nucleation and growth at low temperatures. Materials like silicon nitride provide appropriate surface properties for carbon precursor decomposition and graphene formation even below 400°C, overcoming the typical requirement for high temperatures
Solution Approach 2:
The patent replaces the thermal energy input mechanism (high temperature CVD) with a chemical catalysis mechanism, where the liner layer material catalyzes the decomposition of carbon precursors and facilitates graphene formation at lower temperatures through surface chemistry reactions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the growth of high-quality graphene layers that improve the performance and reliability of semiconductor devices by reducing thermal damage and preventing metal diffusion, thereby extending device lifetime and enhancing electrical conductivity and thermal dissipation.
Implementation Method 1
A hot wire-chemical vapor deposition (HW-CVD) process is used to form graphene on dielectric materials
Implementation Method 2
introducing a hydrocarbon precursor into the processing chamber; pyrolyzing a first portion of the hydrocarbon precursor; introducing the pyrolyzed first portion of the hydrocarbon precursor to the dielectric layer
Implementation Method 3
promote carbon adsorption and crystallization into a two-dimensional honeycomb lattice
Implementation Method 4
introducing specific gases like ammonia to promote carbon adsorption and crystallization into a two-dimensional honeycomb lattice
Data Source
AI summary
A method includes loading a wafer having a dielectric layer thereon into a processing chamber; introducing a hydrocarbon precursor into the processing chamber; pyrolyzing the hydrocarbon precursor; introducing the pyrolyzed hydrocarbon precursor to the dielectric layer to form a graphene layer on the dielectric layer at a temperature lower than about 400° C.