Graphene Diffusion Barrier for Fluorine Blocking
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Solution Overview
Problem
Current diffusion barriers are ineffective in preventing the movement of smaller atoms like boron and fluorine across material boundaries in semiconductor devices, which can damage or alter the properties of materials.
Innovation Solution
A graphene barrier layer with a thickness of 15 Å to 100 Å is formed on a substrate surface, preventing diffusion by depositing an amorphous silicon layer and exposing it to a tungsten precursor, such as WF6, to create a tungsten layer, thereby blocking fluorine diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional diffusion barriers are used to prevent element diffusion, then large atoms like metals are blocked, but smaller atoms like boron and fluorine can still diffuse through
Solution Approach 1:
The patent changes the material parameter from traditional metal-based diffusion barriers to graphene, which has unique atomic structure properties that enable it to block both large and small atoms. The two-dimensional honeycomb lattice structure of graphene creates a barrier that is effective against atoms of varying sizes, including boron and fluorine that previously could penetrate traditional barriers.
Solution Approach 2:
The patent employs graphene as a composite barrier material that combines carbon atoms in a specific two-dimensional arrangement. This composite structure provides enhanced diffusion blocking properties compared to traditional single-material barriers, creating a multi-functional barrier that addresses multiple diffusion pathways simultaneously.
2Reliability
If thicker diffusion barriers are used to improve blocking capability, then diffusion prevention improves, but the barrier layer thickness increases reducing fill material quantity
Solution Approach 1:
The patent changes the thickness parameter of the diffusion barrier to an optimized range of 15-100 Å, which is significantly thinner than traditional barriers. This parameter optimization is made possible by using graphene's unique properties, allowing the barrier to maintain high blocking capability at reduced thickness, thereby increasing the available volume for fill material.
Solution Approach 2:
The patent utilizes graphene as an ultra-thin film barrier that provides effective diffusion blocking at minimal thickness. The two-dimensional nature and atomic-level thickness of graphene create a flexible yet effective barrier that prevents atom diffusion while occupying minimal space, allowing greater quantity of fill material to be deposited.
3Quantity of substance
If thinner barrier layers are used to increase fill material quantity, then more fill material can be deposited, but the blocking capability against small atoms deteriorates
Solution Approach 1:
The patent optimizes the thickness parameter to 15-100 Å, finding the optimal balance point where the barrier is thin enough to allow sufficient fill material deposition but thick enough to maintain effective blocking capability. This parameter optimization is enabled by graphene's superior blocking properties at atomic-scale thicknesses.
Solution Approach 2:
The patent uses a thin graphene layer that, while thin, provides disproportionate blocking effectiveness. The graphene barrier acts as a highly efficient, minimal-thickness solution that sacrifices minimal space while providing robust protection against small atom diffusion, enabling greater fill material deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The graphene barrier layer effectively blocks the diffusion of small atoms like boron and fluorine, allowing for thinner barrier layers that enable a greater quantity of fill material with lower resistivity while maintaining superior blocking capabilities.
Implementation Method 1
The graphene barrier layer prevents diffusion of at least one element between the fill layer and the substrate surface
Implementation Method 2
The amorphous silicon layer is exposed to a tungsten precursor to form a tungsten layer by atomic substitution. The tungsten precursor comprises WF6
Implementation Method 3
The graphene barrier layer prevents diffusion of fluorine into the substrate surface
Data Source
AI summary
A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.