Graphene Domain Control via Patterned Substrate Light Radiation

The invention segments the continuous growth substrate into discrete patterned regions that serve as controlled nucleation sites. By dividing the substrate into specific geometric patterns (such as hexagonal or circular patterns with defined spacing), the method creates multiple controlled growth zones instead of arbitrary growth points, thereby maintaining large area coverage while ensuring regular domain sizes and shapes.

The invention applies local quality by creating spatially varying patterns on the substrate that locally control graphene nucleation and growth. Different regions of the substrate are given different geometric patterns or densities, allowing local adjustment of domain size and shape while maintaining overall large area coverage. This localized control ensures that each domain grows with regular geometry rather than arbitrary shapes.

The invention strategically uses asymmetric pattern designs where domains are deliberately positioned and shaped with specific asymmetric geometries (such as hexagonal patterns with controlled orientation). This controlled asymmetry allows domains to interlock or meet at defined boundaries without creating wrinkles, while still achieving large area coverage. The asymmetric patterns prevent random boundary formation.

The invention employs curved or rounded geometric patterns (such as circular or hexagonal patterns with smooth boundaries) as growth templates. These curved patterns allow graphene domains to grow with smooth boundaries rather than sharp edges, reducing the formation of wrinkles at domain interfaces. The spherical or hexagonal curvature enables domains to meet more gracefully, minimizing boundary defects.