Graphene Electrode Patterns for Semiconductor Device Density
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As integrated circuits increase in device density, the reduced line widths of electrode patterns lead to increased specific resistance and deterioration in electrical characteristics, compromising reliability.
Innovation Solution
The implementation of a graphene pattern on semiconductor devices, formed by supplying hydrogen gas and a carbon-containing reaction gas to grow a graphene layer on the electrode patterns, which reduces resistivity and maintains electrical characteristics even with reduced electrode thickness or width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device density is increased to improve integration, then productivity and area utilization are improved, but specific resistance of electrode patterns increases and electrical characteristics deteriorate
Solution Approach 1:
The patent changes the material parameter of the electrode pattern from conventional metal to graphene. Graphene's superior electrical conductivity compensates for the increased specific resistance caused by reduced line widths, allowing high device density to be achieved without sacrificing electrical performance
Solution Approach 2:
The patent uses composite material structure by combining graphene with conventional electrode materials or using graphene as a separate conductive layer. This composite approach leverages graphene's excellent electrical properties while maintaining the structural integrity needed for high-density integration
2Area of stationary object
If line width of electrode patterns is reduced to increase device density, then area utilization is improved, but specific resistance increases and electrical characteristics deteriorate
Solution Approach 1:
The patent changes the material composition parameter to graphene, which has inherently lower resistivity than conventional metals. This allows the electrode patterns to maintain low specific resistance even when line widths are reduced for higher area utilization
Solution Approach 2:
The patent substitutes the conventional metal-based electrical conduction system with a graphene-based system. Graphene's two-dimensional structure and high carrier mobility provide superior electrical conduction that is less sensitive to dimensional reductions, enabling scaled-down electrode patterns without performance loss
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The graphene pattern improves the electrical characteristics of semiconductor devices by reducing resistivity and maintaining performance despite increased integration density, allowing for more efficient and reliable operation.
Implementation Method 1
supplying a hydrogen gas on the electrode layer that couples hydrogen atoms onto a surface of the electrode layer
Implementation Method 2
supplying a carbon-containing reaction gas on the electrode layer that replaces the hydrogen atoms with carbon atoms and growing the graphene layer from the carbon atoms
Data Source
AI summary
Semiconductor devices may include a substrate including an active region defined by a device isolation layer, source/drain regions in the active region, word lines extending in a first direction parallel to the active region and being arranged in a second direction crossing the first direction, a bit line pattern extending in the second direction and crossing over a portion of the active region positioned between the word lines, and a graphene pattern covering at least a portion of the bit line pattern.