Graphene FET Chemical Sensor with Substrate Support

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Solution Overview

Problem

Existing graphene-based chemical sensors face challenges in achieving reproducibility, robustness, and low detection variability due to the fragile nature of graphene layers, which are prone to damage during manufacturing and use, limiting their practical application as commercial products.

Innovation Solution

A field effect transistor design featuring a continuous monocrystalline graphene layer on an insulating substrate, where the graphene layer remains attached to the substrate during production, reducing the risk of damage and enabling uniform thickness for controlled sensing properties, along with a separate mounting process for electrodes to avoid direct handling and potential damage to the graphene layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If graphene layers are handled and processed during manufacturing, then electrodes can be connected and device assembly can be completed, but the graphene layer is prone to damage which reduces reliability and increases variability

Engineering Contradiction:
Improvedevice assemblyVSAvoidgraphene layer integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The device is divided into separate modules: the graphene sensor element is fabricated independently on its substrate, then mounted as a complete unit onto the FET package. This segmentation allows the fragile graphene to be processed separately under controlled conditions and assembled without direct handling during electrode connection

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The substrate acts as an intermediary carrier that supports the graphene layer throughout the manufacturing process. The substrate enables the graphene to be handled as a robust composite structure rather than a fragile free-standing layer, and provides mechanical protection during assembly operations

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If graphene layers are made thin and continuous for high sensitivity, then detection limits are reduced, but the layers become more fragile and prone to damage during production

Engineering Contradiction:
Improvedetection limitVSAvoidgraphene layer robustness
Core Design Contradiction:
Measurement precisionVSStrength

Solution Approach 1:

The invention utilizes the inherent mechanical properties of graphene as an ultra-thin film that can be supported by a substrate. The substrate provides the necessary mechanical strength while the thin graphene layer maintains its high sensitivity and low detection limits, effectively decoupling the strength requirement from the sensing layer

Inventive Principle:
Principle #30Flexible shells and thin films

Solution Approach 2:

The device combines graphene with a substrate material to create a composite structure. This composite provides both the mechanical robustness needed for manufacturing and the electrical/chemical sensitivity of the pure graphene layer, allowing thin continuous graphene to be used without excessive fragility

Inventive Principle:
Principle #40Composite materials

3Productivity

If variable thickness graphene layers are used, then manufacturing is simpler, but sensing properties become inconsistent and reproducibility decreases

Engineering Contradiction:
Improvemanufacturing speedVSAvoidgraphene layer uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The substrate serves as a controlled parameter reference that enables precise control of graphene thickness during growth or deposition. By using the substrate as a defined reference surface, uniform thickness can be achieved through controlled deposition processes without significantly increasing manufacturing complexity

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances reproducibility and reduces variability among sensors, achieving low detection limits while maintaining the sensitivity and selectivity of graphene-based chemical sensors, making them more suitable for practical use.

Implementation Method 1

A voltage is applied to the gate and when gases or liquids with a dipole moment are introduced into the air gap, they are attracted to the charged gate or to the semiconductor surface

Methodology Applied
Scientific EffectElectric field: Electric Field

Implementation Method 2

field effect transistor for chemical sensing, comprising a gate electrode, a drain electrode, a source electrode and an electrically conducting and chemically sensitive channel

Methodology Applied
Scientific EffectField effect: Electric Field

Data Source

PatentEP2705357B1Field effect transistor for chemical sensing using graphene, chemical sensor using the transistor and method for producing the transistor
Publication Date: 2016.12.07 GRAPHENSIC AB
  • EP2705357B1 patent drawingFigure 1a~1b
  • EP2705357B1 patent drawingFigure 2a~3

AI summary

A field effect transistor (20) for chemical sensing, comprising an electrically conducting and chemically sensitive channel (2) extending between drain (5) and source (6) electrodes. A gate electrode (7) is separated from the channel (2) by a gap (10) through which a chemical to be sensed can reach the channel (2) which comprises a continuous monocrystalline graphene layer (2a) arranged on an electrically insulating graphene layer substrate (1). The graphene layer (2a) extends between and is electrically connected to the source electrode (5) and the drain electrode (6). The substrate supports the graphene layer, allowing it to stay 2-dimensional and continuous, and enables it to be provided on a well defined surface, and be produced and added to the transistor as a separate part. This is beneficial for reproducibility and reduces the risk of damage to the graphene layer during production and after. Low detection limits with low variability between individual transistors are also enabled. There is also provided a chemical sensor (30) using the transistor (20) and a method for providing the transistor (20).