Graphene FinFET Heat Dissipation via Shallow Trench Isolation
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Solution Overview
Problem
FinFETs face significant heat generation issues due to increased current density and smaller device sizes, which existing technologies have not adequately addressed, leading to thermal management challenges in semiconductor integrated circuits.
Innovation Solution
A semiconductor structure is formed with a graphene layer on the fins and a shallow trench isolation layer that covers the graphene, allowing the upper portion of the fins to protrude and utilizing graphene's high thermal conductivity to efficiently dissipate heat.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If finFET device size is reduced to increase circuit density, then device integration is improved, but heat generation increases due to higher current density
Solution Approach 1:
A graphene layer is introduced as an intermediary thermal management component between the finFET fins and the substrate. This graphene layer serves as a heat dissipation pathway, conducting heat away from the high-current regions of the fins to reduce temperature buildup while allowing the device scaling to continue
Solution Approach 2:
The patent changes the thermal conductivity parameter of the substrate region by incorporating graphene, which has exceptionally high thermal conductivity. This parameter change enables more efficient heat dissipation from the fins, allowing higher current densities to be sustained without excessive temperature rise
2Power
If current density is increased in finFETs, then drive current is improved, but heat generation is exacerbated
Solution Approach 1:
The patent converts the harmful heat generated by high current density into a manageable thermal flow by providing a dedicated heat dissipation pathway through the graphene layer. The heat that would otherwise damage the device is instead channeled away through the high thermal conductivity graphene, allowing high drive currents to be maintained safely
Solution Approach 2:
The graphene layer acts as a thermal intermediary that decouples the relationship between high current operation and temperature rise. By introducing this intermediate heat conduction layer, the system can operate at high currents while the graphene mediates the thermal transfer to prevent overheating
3Temperature
If graphene layer is exposed, then thermal conductivity is maximized, but electrical shorts may occur
Solution Approach 1:
The patent applies different properties to different regions: the graphene layer is exposed in areas where thermal conduction is needed (in contact with fins), while being covered by dielectric material in areas where electrical isolation is required. This local differentiation of graphene exposure provides both thermal management and electrical protection
Solution Approach 2:
A dielectric layer is introduced as an intermediary between the exposed graphene and conductive elements that would cause shorts. This dielectric intermediary maintains the electrical isolation function while allowing the graphene to perform its thermal conduction function in exposed regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of graphene and shallow trench isolation layers effectively reduces heat buildup in finFETs by enhancing thermal conductivity, preventing shorts, and improving heat transfer, thus addressing the thermal management challenges in finFETs.
Implementation Method 1
utilizing graphene's high thermal conductivity to efficiently dissipate heat
Data Source
AI summary
Embodiments of the present invention provide structures and methods for heat suppression in finFET devices. Fins are formed in a semiconductor substrate. A graphene layer is formed on a lower portion of the sidewalls of the fins. A shallow trench isolation region is disposed on the structure and covers the graphene layer, while an upper portion of the fins protrudes from the shallow trench isolation region. The graphene layer may also be deposited on a top surface of the base semiconductor substrate. The graphene serves to conduct heat away from the fins more effectively than other dielectric materials.