Graphene Patterning via Hot Embossing Imprinting
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Solution Overview
Problem
Current methods for mass-producing graphene are inefficient and fail to meet electrical and mechanical characteristics due to overlapping graphene pieces, limiting their application in next-generation electronic devices, particularly in flexible and transparent electrodes.
Innovation Solution
A patterning method using hot embossing imprinting to form graphene nanopatterns on polymer substrates without the need for resist and lift-off processes, allowing for simple, economical, and large-area patterning with improved thermal and electrical conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional mechanical grinding and self-assembly method is used to mass-produce graphene, then production cost is reduced, but electrical and mechanical characteristics deteriorate due to overlapping graphene pieces
Solution Approach 1:
The patent changes the production parameters by using chemical vapor deposition (CVD) method with controlled temperature, pressure, and gas flow conditions to grow high-quality graphene films with consistent properties, avoiding the random overlapping issues of mechanical grinding methods
Solution Approach 2:
The patent replaces the mechanical grinding method with a chemical vapor deposition process that uses chemical reactions and controlled deposition to form graphene, substituting mechanical assembly with a controlled chemical synthesis approach that ensures uniform structure and superior electrical/mechanical properties
2Manufacturing precision
If resist and lift-off process is used to pattern graphene on substrate, then desired positioning is achieved, but process complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-forming the graphene film on the substrate using CVD method before any patterning steps, ensuring uniform coverage and adhesion, which simplifies subsequent patterning processes and eliminates the need for complex resist and lift-off procedures
Solution Approach 2:
The patent extracts and eliminates the resist and lift-off processes from the conventional patterning sequence by using direct patterning methods such as photolithography or stamping on the pre-formed graphene film, removing unnecessary process steps while maintaining positioning precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables invisible patterning without index-matching, supports flexible and transparent devices, and enhances semiconductor performance by maintaining graphene on both patterned and non-patterned sites, facilitating the use of graphene in next-generation semiconductor and flexible electronic devices.
Implementation Method 1
forming a nanopattern on the graphene layer by hot embossing imprinting
Data Source
AI summary
A patterning method of a graphene, including a step of forming a graphene layer on a polymer substrate; and a step of forming a nanopattern in the graphene layer by hot embossing imprinting. The step of forming a nanopattern in the graphene layer by hot embossing imprinting includes contacting a hot mold, in which a nanopattern is formed, or contacting a roll-to-roll hot mold, in which a nanopattern is formed, to the graphene layer, followed by heating and pressing the graphene layer. In the step of forming a nanopattern in the graphene layer, the graphene layer is cleaved by a protrusion of the nanopattern formed on the hot mold or the hot roll-to-roll mold, and the cleaved graphene is present on each of a protrusion and a recessed portion of the nanopattern formed in the polymer substrate under the graphene later.