Graphene Interconnect Deposition Using RF-Heated Magnetic Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming reliable semiconductor devices at smaller sizes due to the complexity and difficulty of fabrication processes as feature sizes decrease, particularly in achieving efficient deposition of graphene layers on metal lines/vias using conventional chemical vapor deposition methods that require lengthy heating times.
Innovation Solution
A method involving a deposition system with an RF source is used to form a graphene layer on a magnetic layer, utilizing an RF source to heat the magnetic layer to a target temperature within seconds, thereby shortening the deposition time and improving production efficiency and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional chemical vapor deposition methods are used to deposit graphene layers on metal lines/vias, then the graphene layer can be formed, but the heating time required is lengthy which reduces production efficiency
Solution Approach 1:
The patent replaces the conventional thermal field-based heating system with a magnetic field-based induction heating system. The magnetic layer (e.g., cobalt, nickel, or their alloys) is heated rapidly through electromagnetic induction from an RF source, eliminating the need for slow conventional thermal heating. This substitution of heating mechanism directly resolves the contradiction by enabling rapid heating to target temperatures within seconds, thereby improving production efficiency while minimizing heating time loss.
Solution Approach 2:
The patent changes the heating parameter from conventional slow thermal heating to rapid induction heating using magnetic fields. By introducing a magnetic layer with specific magnetic properties (high permeability, saturation magnetization) and applying RF power, the heating rate parameter is dramatically increased. This parameter change enables the graphene deposition process to be completed in seconds rather than hours, directly addressing the productivity-time contradiction.
2Productivity
If feature sizes are decreased to increase functional density, then production efficiency is improved and costs are lowered, but the complexity and difficulty of fabrication processes increase
Solution Approach 1:
The patent replaces the complex conventional thermal CVD heating system with a simpler magnetic field-based induction heating system. The magnetic layer serves as both a functional component and a heating element, eliminating the need for separate heating apparatus. This substitution simplifies the fabrication process while enabling rapid heating, thereby improving productivity without increasing process complexity despite decreasing feature sizes.
Solution Approach 2:
The magnetic layer performs multiple functions: it serves as a heating element through induction heating, as a catalyst substrate for graphene growth, and as a functional magnetic interconnect component. This multi-functionality reduces the overall number of process steps and components needed, simplifying the fabrication process while maintaining high productivity even as feature sizes decrease and functional density increases.
3Ease of manufacture
If conventional heating methods are used, then the process is simple, but the deposition time is lengthy which reduces quality and efficiency
Solution Approach 1:
The patent substitutes conventional thermal heating with magnetic field-based induction heating. The magnetic layer, when exposed to RF fields, generates heat rapidly through hysteresis losses and eddy currents. This substitution maintains process simplicity by using a straightforward RF heating mechanism while dramatically reducing deposition time from hours to seconds, thereby improving both quality and efficiency without sacrificing ease of manufacture.
Solution Approach 2:
The patent changes the heating rate parameter by introducing rapid induction heating. By controlling RF power and frequency applied to the magnetic layer, the heating rate is increased from conventional slow heating to rapid heating (heating to target temperature within seconds). This parameter change reduces deposition time significantly while maintaining process simplicity, directly addressing the contradiction between ease of manufacture and deposition time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a rapid deposition of graphene layers with reduced defect density and improved sheet resistance, enhancing the production efficiency and quality of semiconductor devices.
Implementation Method 1
utilizing an RF source to heat the magnetic layer to a target temperature within seconds
Implementation Method 2
utilizing an RF source to heat the magnetic layer to a target temperature within seconds
Implementation Method 3
conventional chemical vapor deposition methods
Data Source
AI summary
A semiconductor structure includes a semiconductor substrate, a gate structure, a source/drain structure, a contact, a dielectric layer, and a metal line. The gate structure is on the semiconductor substrate. The source/drain structure is adjacent to the gate structure. The contact lands on the source/drain structure. The dielectric layer spas the contact and the gate structure. The metal line extends through the dielectric layer to the contact. The metal line includes a liner over the contact, a magnetic layer over the liner, a graphene layer over the magnetic layer, and a filling metal over the graphene layer. The magnetic layer has a greater permeability coefficient than the filling metal.