Graphene Interconnection Trench via High Frequency Circuit

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Solution Overview

Problem

High frequency circuits using graphene face challenges in maintaining transmission characteristics due to deterioration caused by insulating layers, which lead to charge loss and scattering, limiting their efficiency in high frequency applications.

Innovation Solution

Incorporating a trench or via under the graphene interconnection unit to remove the insulating layer, thereby preventing property deterioration and enhancing conductivity, with the trench depth and size optimized for improved transmission characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an insulating layer is present under the graphene interconnection unit, then the structural integrity is maintained, but the transmission characteristics deteriorate due to charge loss and scattering

Engineering Contradiction:
Improvetransmission characteristicsVSAvoidcharge loss and scattering
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent removes the insulating layer from the region directly under the graphene interconnection unit by defining a trench or via structure. This extraction eliminates the source of charge loss and scattering, allowing the graphene to maintain its high conductivity and transmission characteristics in high frequency fields.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces a vertical dimension by creating a trench or via structure underneath the graphene interconnection unit. This three-dimensional structural modification allows the graphene to be positioned above the trench/via, eliminating contact with the insulating layer while maintaining overall structural integrity through the trench walls or via structure.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the insulating layer is removed by defining a trench or via, then conductivity is enhanced, but the device complexity increases

Engineering Contradiction:
ImproveconductivityVSAvoidtrench or via structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the substrate structure by defining a trench or via region separate from the surrounding insulating layer. This segmentation allows the graphene interconnection unit to be positioned over the trench/via, creating distinct functional zones: the trench/via region for enhanced conductivity and the surrounding insulating layer for structural support and electrical isolation.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively improves the transmission characteristics of high frequency circuits by reducing electrical loss and maintaining high conductivity, making them suitable for high-speed applications such as RF and microwave circuits.

Implementation Method 1

conveying current via the graphene interconnection unit in a high frequency field

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS9576916B2High frequency circuit comprising graphene and method of operating the same
Publication Date: 2017.02.21 SAMSUNG ELECTRONICS CO LTD
  • US9576916B2 patent drawing
  • US9576916B2 patent drawing
  • US9576916B2 patent drawing

AI summary

A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.