Graphene Redistribution Layers with IPL Sintering to Reduce Ion Migration
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Solution Overview
Problem
Semiconductor device manufacturing faces challenges with ion migration between conductive traces on printed circuit boards (PCBs) due to increasing density, leading to insulation failure and short circuits, necessitating a method that reduces vulnerability to ion migration.
Innovation Solution
The use of graphene-based redistribution layers sintered by intensive pulsed light (IPL) irradiation for semiconductor packages, which enhances electrical and thermal conductivity, reduces metal oxidation, and decreases ion migration, while also streamlining the manufacturing process by forming conductive layers during packaging rather than pre-forming them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional PCB manufacturing methods are used, then manufacturing process is simpler, but ion migration between conductive traces increases leading to insulation failure
Solution Approach 1:
The patent applies parameter changes by modifying the physical and chemical properties of conductive traces through intensive pulsed light irradiation. This treatment alters the crystalline structure and reduces ion mobility in the conductive material, thereby decreasing ion migration while maintaining electrical conductivity. The process transforms the material parameters to achieve both improved reliability and manufacturing efficiency
Solution Approach 2:
The patent replaces conventional thermal sintering processes with intensive pulsed light irradiation for forming and treating conductive traces. This substitution of the processing mechanism eliminates the need for extended high-temperature exposure, reducing ion migration while maintaining trace integrity. The light-based processing provides precise control over the treatment parameters
2Volume of moving object
If PCB density is increased to meet miniaturization demands, then device size decreases, but vulnerability to ion migration increases
Solution Approach 1:
The patent modifies the material parameters of conductive traces through intensive pulsed light irradiation, changing the crystalline structure and reducing ion mobility. This parameter transformation allows smaller pitch distances between traces while maintaining resistance to ion migration, enabling device miniaturization without sacrificing reliability
Solution Approach 2:
The patent employs composite conductive structures that combine multiple materials or phases with different properties. By creating composite conductive traces with reduced ion mobility characteristics, the design achieves smaller dimensions while maintaining protection against ion migration through the combined properties of the composite structure
3Reliability
If intensive pulsed light irradiation is used to sinter graphene-based redistribution layers, then electrical and thermal conductivity improve, but processing equipment complexity increases
Solution Approach 1:
The patent replaces conventional thermal sintering equipment with intensive pulsed light irradiation systems for forming and treating conductive traces and graphene-based redistribution layers. This substitution provides precise control over the sintering process, achieving high electrical and thermal conductivity while reducing equipment complexity through non-contact, rapid processing that eliminates extended thermal exposure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the manufacturing efficiency and reliability of semiconductor packages by reducing ion migration, improving conductivity, and lowering manufacturing costs through faster processing times and increased units per hour, thereby enhancing the mean time between failures.
Implementation Method 1
The use of graphene-based redistribution layers sintered by intensive pulsed light (IPL) irradiation
Implementation Method 2
graphene-based redistribution layers sintered by intensive pulsed light (IPL) irradiation
Implementation Method 3
enhances electrical and thermal conductivity, reduces metal oxidation
Implementation Method 4
enhances electrical and thermal conductivity
Implementation Method 5
enhances electrical and thermal conductivity
Implementation Method 6
reduces ion migration
Data Source
AI summary
A semiconductor device has a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A conductive layer is formed over the substrate opposite the electrical component after depositing the encapsulant. The conductive layer is deposited as a plurality of graphene-coated metal balls in a matrix. The conductive layer is sintered by intensive pulsed light (IPL) irradiation.