Graphene Laminate Structure for Thermal Charge Stability
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Solution Overview
Problem
Graphene-based electronic devices experience thermal instability and charge carrier concentration drift, particularly at elevated temperatures, leading to performance degradation and the need for frequent calibration.
Innovation Solution
A graphene-containing laminate comprising a graphene layer structure with a first metal oxide layer having a thickness of 0.1 nm to 5 nm and a work function of 5 eV or more, followed by a second metal oxide layer, which is preferably formed using Atomic Layer Deposition (ALD), to stabilize charge carrier concentration and enhance thermal stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If graphene is used in electronic devices to improve electrical and thermal conductance, then operating efficiency is improved, but thermal instability and charge carrier concentration drift occur at elevated temperatures
Solution Approach 1:
The patent applies composite materials by combining graphene with metal oxide layers (such as MoO3, Al2O3, HfO2) to create a laminated structure. This composite approach maintains the excellent electrical and thermal conductance of graphene while adding thermal stability through the metal oxide layers, which have high melting points and stable crystal structures that prevent charge carrier concentration drift at elevated temperatures.
Solution Approach 2:
The patent changes the physical and chemical parameters of the graphene structure by controlling the thickness of metal oxide layers (ranging from 0.1 nm to 5 nm for first metal oxide layers) and selecting materials with specific work functions (5 eV or more). These parameter adjustments optimize the balance between electrical conductance and thermal stability, allowing the device to maintain performance at elevated temperatures up to 200°C.
2Duration of action of stationary object
If graphene devices operate at elevated temperatures for prolonged periods, then device durability is improved, but charge carrier concentration drift causes performance degradation
Solution Approach 1:
The patent introduces metal oxide layers as intermediary materials between the graphene and the environment. These intermediary layers act as barriers that prevent direct interaction between graphene and thermal stress, while also providing a stable interface that maintains charge carrier concentration. The metal oxide layers mediate the thermal effects, allowing prolonged operation at elevated temperatures without performance degradation.
3Measurement precision
If frequent calibration is performed to maintain device accuracy, then measurement precision is improved, but loss of time and productivity increase
Solution Approach 1:
The patent implements preliminary action by incorporating thermally stable metal oxide layers during the manufacturing process, which preemptively prevent charge carrier concentration drift before it occurs during operation. This preliminary stabilization eliminates the need for frequent calibration, as the device maintains its accuracy over prolonged periods at elevated temperatures, thereby reducing calibration time and maintaining productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The laminate maintains a thermally stable charge carrier concentration and resistivity, with minimal change at temperatures up to 200°C, reducing the need for recalibration and improving device performance and reliability.
Implementation Method 1
a first metal oxide layer having a thickness of from 0.1 nm to 5 nm and a work function of 5 eV or more
Implementation Method 2
which is preferably formed using Atomic Layer Deposition (ALD)
Data Source
AI summary
The present invention provides a graphene-containing laminate comprising. in order: a substrate: a graphene layer structure: a first metal oxide layer formed of a first metal oxide, wherein the first metal oxide is a transition metal oxide: and a second metal oxide layer formed of a second metal oxide: wherein the first metal oxide layer has a thickness of from 0.1 nm to 5 nm; and wherein the first metal oxide layer has a work function of 5 eV or more.