Graphene Layer Deposition via Electron Cyclotron Resonance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for forming graphene layers are limited by the need for manual positioning, small area application, and expensive, time-consuming transfer processes, making them unsuitable for large-area semiconductor industry applications.
Innovation Solution
A method utilizing an electron cyclotron resonance device to deposit a graphene layer on a substrate by evacuating the chamber, introducing a carbon-containing gas, heating the substrate, and exciting the gas with a microwave to create a carbon-containing plasma, which can be applied to various substrate materials and sizes, including those with protrusions or cavities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If mechanical exfoliation method is used to transfer graphene layer, then graphene layer can be obtained, but the graphene layer position requires manual positioning which consumes a lot of time and the graphene connected to graphite has too small area for semiconductor industry application
Solution Approach 1:
The patent replaces the mechanical exfoliation and manual positioning system with an electron cyclotron resonance (ECR) plasma deposition system. The ECR device uses microwave radiation to generate plasma that deposits graphene directly onto the substrate in a controlled manner, eliminating the need for mechanical transfer and manual positioning operations.
Solution Approach 2:
The patent changes the fundamental parameters of graphene synthesis from mechanical exfoliation to plasma-enhanced chemical vapor deposition. By controlling plasma power, gas flow rates, pressure, and substrate temperature, the method achieves direct growth of large-area graphene layers with controlled thickness and properties.
2Ease of manufacture
If other methods such as pyrolysis epitaxial growing, oxidation-reduction, or chemical vapor deposition are used, then graphene layer can be formed, but only small area graphene layer is formed on substrate of specific material and transfer process requires different solvents, catalyst, or ultra high temperature pyrolysis which is expensive and time-consuming
Solution Approach 1:
The ECR plasma deposition method demonstrated in the patent is universally applicable to various substrate materials including silicon, glass, and flexible substrates. The plasma process does not require substrate-specific optimization or complex transfer steps involving different solvents and catalysts for different material types.
Solution Approach 2:
The patent extracts and eliminates the complex transfer process from the graphene fabrication workflow. By using direct plasma deposition, the method removes the need for growth substrate preparation, graphene formation, and subsequent transfer steps involving solvents, catalysts, or ultra-high temperature pyrolysis.
3Ease of manufacture
If conventional deposition methods are used, then graphene layer can be deposited, but the process is expensive and time-consuming due to transfer requirements
Solution Approach 1:
The ECR plasma deposition process enables continuous graphene layer formation on large substrates without interruption for transfer operations. The plasma can be maintained continuously, allowing efficient deposition of large-area graphene layers in a single step, significantly improving productivity compared to batch transfer methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of large-area graphene layers on arbitrary substrates with controlled thickness and electrical properties, reducing the need for manual positioning and transfer processes, and improving the efficiency and cost-effectiveness for semiconductor applications.
Implementation Method 1
using a microwave with an electron cyclotron resonance mechanism to excite the carbon-containing gas
Implementation Method 2
heating the substrate until the substrate has a temperature of 100° C. to 700° C.; and using a microwave with an electron cyclotron resonance mechanism to excite the carbon-containing gas to deposit a graphene layer on the substrate
Data Source
AI summary
Disclosed is a method of forming a graphene layer, including: putting a substrate in a chamber of an electron cyclotron resonance device, and then evacuating the chamber. Conducting a carbon-containing gas into the chamber, wherein the carbon-containing gas has a pressure of 10−2 torr to 10−4 torr in the chamber. Heating the substrate until the substrate has a temperature of 100° C. to 600° C., and using a microwave with an electron cyclotron resonance mechanism to excite the carbon-containing gas to deposit a graphene layer on the substrate.