Graphene Mask Layer for Leakage Current Reduction in Semiconductor Light Emitting Devices
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor light emitting devices face challenges in reducing leakage current and enhancing light output, particularly in high current and high output applications, where existing technologies struggle to improve luminous efficiency and crystallinity.
Innovation Solution
The semiconductor light emitting device incorporates a mask layer with a graphene layer and insulating layers, along with light emitting nanostructures that include a conductivity-type semiconductor core, active layer, and a conductivity-type semiconductor layer, to effectively block leakage current and increase light output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional light emitting structures are used, then device simplicity is maintained, but leakage current increases and light output decreases
Solution Approach 1:
The mask layer is constructed as a composite structure comprising a graphene layer combined with insulating layers (such as SiO2, Al2O3, ZrO, TiO2, SiN, SiON, TiN, TiAlN, TiSiN, or AlN). This composite material approach enables the mask layer to simultaneously provide electrical isolation and mechanical support, effectively blocking leakage current while maintaining structural integrity during nanowire growth.
Solution Approach 2:
The mask layer is divided into multiple functional sub-layers: a graphene layer for electrical isolation and insulating layers for mechanical support and additional isolation. This segmentation allows each layer to perform its specific function optimally, with the graphene layer blocking leakage current and the insulating layers providing structural stability during the growth process.
2Illumination intensity
If light emitting nanostructures are added to enhance luminous efficiency, then light output increases, but device complexity increases
Solution Approach 1:
Light emitting nanostructures are grown locally at specific positions through the openings in the mask layer, rather than uniformly across the entire surface. This local quality approach concentrates light emission in targeted regions, enhancing luminous efficiency while maintaining controlled device complexity through spatially selective nanowire formation.
Solution Approach 2:
The invention transitions from planar light emitting structures to three-dimensional nanowire nanostructures that grow vertically through the mask layer openings. This dimensional change increases the effective light emitting surface area and improves luminous efficiency, as the nanowires provide multiple light emission interfaces while maintaining a compact footprint.
3Power
If high current applications are targeted, then power output increases, but leakage current becomes more problematic
Solution Approach 1:
The graphene-based mask layer serves as an intermediary electrical isolation barrier between conductive regions. This intermediary structure effectively blocks leakage current paths that would otherwise occur in high current applications, allowing the device to operate at high power levels without suffering from excessive leakage losses.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces leakage current and enhances light output by using a graphene-based mask layer and light emitting nanostructures, resulting in improved luminous efficiency and crystallinity, suitable for high current and high output applications.
Implementation Method 1
a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer
Implementation Method 2
a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer
Data Source
AI summary
There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.