Graphene Capped Metal Interconnects for Electro-Migration Control
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Solution Overview
Problem
In high-density and high-performance semiconductor devices, reducing the width or thickness of metal interconnects increases resistance and current density, leading to electro-migration issues such as defects and reduced electro-migration failure time.
Innovation Solution
An interconnect structure is developed using a graphene layer as a capping layer with a metal bonding layer to enhance adhesion between the graphene and metal interconnect, restricting electro-migration, where the metal bonding layer includes materials like magnesium, aluminum, or titanium to form interfacial bonding and prevent diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the width or thickness of metal interconnect is decreased to increase integration density and reduce capacitance, then the number of semiconductor chips integrated on each wafer increases and signal speed improves, but resistance rapidly increases
Solution Approach 1:
A graphene layer is introduced as an intermediary capping layer between the metal interconnect and the surrounding environment. The graphene layer has superior electrical conductivity and acts as a mediator to reduce resistance at the interconnect interface while maintaining the reduced dimensions for high integration density
Solution Approach 2:
The interconnect structure uses a composite material approach by combining metal interconnect with graphene capping layer. The graphene layer provides enhanced electrical conductivity and protects the metal interconnect, creating a composite structure that overcomes the resistance increase problem while maintaining small dimensions
2Productivity
If the width or thickness of metal interconnect is decreased to increase integration density, then the number of semiconductor chips integrated on each wafer increases, but current density increases leading to electro-migration
Solution Approach 1:
The graphene layer serves as a protective intermediary between the metal interconnect and the high current density environment. Graphene's unique structure acts as a barrier that prevents electro-migration of metal atoms while allowing electrical current to pass through, thus protecting the interconnect integrity at reduced dimensions
Solution Approach 2:
The patent replaces traditional protective metal layers or coatings with graphene, utilizing graphene's inherent mechanical strength and chemical stability. This substitution provides superior protection against electro-migration while maintaining the electrical performance required for high integration density
3Speed
If the thickness of metal interconnect is decreased to reduce capacitance and increase signal speed, then signal transmission speed improves, but resistance rapidly increases
Solution Approach 1:
The composite structure of metal interconnect with graphene capping layer creates a system where the graphene layer compensates for the resistance increase caused by reduced thickness. The graphene's high conductivity forms a parallel conduction path and reduces surface scattering effects, maintaining signal speed while lowering overall resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively controls electro-migration in metal interconnects by enhancing adhesion and forming carbide bonds, thereby reducing void formation and extending electro-migration failure time.
Implementation Method 1
Adhesion between the graphene layer and a metal interconnect is increased to control electro-migration in the metal interconnect
Implementation Method 2
forming carbide bonds, thereby reducing void formation and extending electro-migration failure time
Data Source
AI summary
An interconnect structure and an electronic device including the interconnect structure are disclosed. The interconnect structure may include a metal interconnect having a bottom surface and two opposite side surfaces surrounded by a dielectric layer, a graphene layer on the metal interconnect, and a metal bonding layer providing interface adhesion between the metal interconnect and the graphene layer. The metal bonding layer includes a metal material.