Graphene-Metal Layer Stacks for Out-of-Plane Conductivity

The patent creates a composite material by combining graphene layers with transition metal atoms (such as tungsten, molybdenum, or tungsten carbide) inserted between the graphene planes. This composite structure leverages the high in-plane conductivity of graphene while the transition metal components provide conductive pathways in the out-of-plane direction, resolving the contradiction between maintaining graphene's inherent conductivity and improving out-of-plane transport.

Transition metal atoms serve as intermediary elements positioned between graphene layers to facilitate charge transport across layers. These intermediary atoms create conductive bridges that enable electrons to move between graphene planes, thereby improving out-of-plane conductivity without disrupting the intrinsic properties of the graphene layers themselves.

The transition metal atoms are inserted between graphene layers during the synthesis process before the final material structure is completed. This preliminary action of pre-positioning the conductive intermediaries during fabrication simplifies the overall manufacturing process compared to attempting to add them later, as the insertion occurs while the graphene structure is being formed or is most accessible.

The patent utilizes changes in physical and chemical parameters during synthesis (such as temperature, pressure, and chemical environment) to control the insertion of transition metal atoms between graphene layers. By adjusting these parameters, the manufacturing process can be optimized to achieve the desired composite structure with controlled metal atom positioning and concentration, making the fabrication more manageable.