Graphene Electronic Device Fabrication via Metal Protection Layer

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Solution Overview

Problem

Graphene electronic devices face damage during the transfer process due to direct contact with photoresist, and existing methods do not effectively prevent this damage, which affects their performance and operational integrity.

Innovation Solution

A method is developed where a metal protection layer is formed between the graphene and the photoresist to prevent direct contact, allowing for the sequential patterning and wet etching of the metal protection and catalyst layers, thereby protecting the graphene and maintaining its inherent characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If graphene is transferred on a substrate, then the graphene electronic device can be fabricated, but the graphene may be damaged during the transfer process due to direct contact with photoresist

Engineering Contradiction:

Improvefabrication of graphene electronic deviceVSAvoidintegrity of graphene

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

A metal protection layer is introduced as an intermediary between the graphene layer and the photoresist during patterning processes. This metal protection layer prevents direct contact between the photoresist and graphene, thereby avoiding damage to the graphene while still enabling the fabrication process to proceed. The metal protection layer serves as a mediator that allows the photoresist to be applied and processed without harming the underlying graphene structure.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If a metal protection layer is formed between graphene and photoresist, then the graphene is protected from damage, but the device complexity increases

Engineering Contradiction:

Improveintegrity of grapheneVSAvoidfabrication process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The metal protection layer is formed in advance, before the photoresist patterning steps are performed. This preliminary action ensures that the graphene is protected from the outset during subsequent processing steps. By preparing the protection layer beforehand, the method avoids the need for complex in-situ protection mechanisms during patterning, thereby managing device complexity while maintaining graphene integrity.

Inventive Principle:

Principle #10Preliminary action

3Ease of manufacture

If the metal catalyst layer is removed under the graphene, then the graphene can be transferred, but the graphene may contact the photoresist and get damaged

Engineering Contradiction:

Improvetransfer of grapheneVSAvoiddamage to graphene from photoresist contact

Core Design Contradiction:

Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The metal protection layer serves as a continuous intermediary between the graphene and the photoresist throughout the patterning process, even after the metal catalyst layer is removed. This ensures that the graphene remains protected from direct photoresist contact during transfer and subsequent processing, eliminating the harmful effect while maintaining the transfer capability.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach prevents damage to the graphene during the fabrication process, enabling the formation of graphene electronic devices without transferring, allowing for operation at room temperature and maintaining the integrity of the graphene channel layer, thus enhancing device performance and reliability.

Implementation Method 1

forming a metal protection layer on the graphene layer... prevents damage to the graphene during the fabrication process

Methodology Applied

Scientific EffectPhysical barrier protection:

Implementation Method 2

exposing the graphene layer in a channel formation region by wet etching the metal protection layer and the first metal layer

Methodology Applied

Scientific EffectWet etching:

Implementation Method 3

The graphene layer may be formed at a temperature in a range from about 550° C. to about 650° C. by inductively coupled plasma-chemical vapored deposition (ICP-CVD)

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS9142635B2Graphene electronic device and method of fabricating the same

Publication Date: 2015.09.22 SAMSUNG ELECTRONICS CO LTD

AI summary

The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.