Micro LED Display Assembly Using Graphene to Eliminate Transfer Bottlenecks
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Solution Overview
Problem
The existing methods for manufacturing image display devices using micro LEDs are time-consuming and prone to connection defects, leading to reduced yield and higher costs, especially as the number of micro LEDs increases for higher image quality resolutions like 4K or 8K.
Innovation Solution
A method involving the formation of a graphene-including layer on a substrate, followed by a semiconductor layer with a light-emitting layer, and subsequent patterning to create a light-emitting element, with insulating films and wiring layers to connect the elements efficiently, reducing the transfer process and increasing yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If individually-formed micro LEDs are sequentially transferred to a drive circuit substrate, then the display device can achieve high luminance and self-luminous properties, but the transfer process becomes extremely time-consuming and connection defects increase
Solution Approach 1:
The patent merges the light-emitting element formation process with the drive circuit formation process by growing both on the same substrate simultaneously. This eliminates the need for separate transfer processes, directly resolving the productivity issue while maintaining the self-luminous micro LED structure that provides high luminance.
Solution Approach 2:
The drive circuit patterns are formed in advance on the substrate before the light-emitting elements are grown. This preliminary action allows the light-emitting elements to be directly connected to pre-formed circuit patterns, eliminating post-growth transfer and connection processes, thereby大幅提高 productivity.
2Manufacturing precision
If the number of micro LEDs is increased for higher image quality such as 4K or 8K, then the image quality improves, but the transfer process time increases enormously and yield decreases due to connection defects
Solution Approach 1:
By combining the growth of light-emitting elements and drive circuits on the same substrate, the patent enables simultaneous formation of millions of micro LEDs with their corresponding drive circuits. This eliminates the sequential transfer bottleneck, allowing high-resolution displays (4K/8K) to be manufactured without proportionally increasing transfer time.
Solution Approach 2:
The light-emitting elements are grown in situ directly on the substrate with integrated drive circuits, making the substrate self-sufficient without requiring external transfer operations. This self-service approach eliminates transfer time and associated connection defects, enabling high-yield production of high-resolution displays.
3Ease of manufacture
If individually-formed micro LEDs are sequentially transferred to a drive circuit, then the display device can be assembled, but connection defects occur and yield is reduced
Solution Approach 1:
The patent merges the light-emitting element growth with the drive circuit formation on the same substrate. This integration eliminates separate transfer and connection steps, thereby eliminating connection defects and improving yield, while maintaining ease of manufacture through a unified growth process.
Solution Approach 2:
The substrate acts as an intermediary that simultaneously supports both the drive circuit patterns and the light-emitting elements during growth. This intermediary role ensures direct, defect-free connections between circuits and light-emitting elements without requiring external transfer operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach shortens the transfer process of light-emitting elements and enhances yield, enabling the production of high-definition image display devices with reduced manufacturing time and costs, while maintaining high image quality.
Implementation Method 1
a semiconductor layer including a light-emitting layer is grown on the graphene-including layer
Data Source
AI summary
A method for manufacturing an image display device according to an embodiment includes: forming a graphene layer on a first surface of a substrate; forming a semiconductor layer on the graphene layer; forming a light-emitting element that includes a light-emitting surface on the graphene layer and an upper surface at a side opposite to the light-emitting surface by patterning the semiconductor layer; forming a first insulating film covering the first surface, the graphene layer, and the light-emitting element; forming a circuit element on the first insulating film; forming a second insulating film covering the first insulating film and the circuit element; forming a first via extending through the first and second insulating films; and forming a first wiring layer on the second insulating film. The first via is located between, and electrically connects, the first wiring layer and the upper surface.