Graphene MIIM Rectifier Structure for Low-Resistance THz Detection
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Solution Overview
Problem
MIM diodes struggle to optimize both responsivity and dynamic resistance, making it difficult to achieve high performance in infrared or terahertz detection and energy conversion applications.
Innovation Solution
A MIIM diode configuration with a semiconductor graphene layer between two insulating layers of different electronic affinities, along with specific metal and insulating layer thicknesses, allows for resonant tunneling and improved responsivity while maintaining low dynamic resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a MIM diode configuration is used, then the device structure is simple, but the responsivity cannot be optimized without degrading the dynamic resistance
Solution Approach 1:
The single insulating layer in a MIM diode is segmented into two separate insulating layers (first insulating layer and second insulating layer) with different electronic affinities. This segmentation allows independent optimization of each layer's properties, enabling the system to achieve both high responsivity and low dynamic resistance simultaneously, which is not possible with a single uniform insulating layer.
Solution Approach 2:
The patent applies local quality by creating regions with different electronic affinities within the insulating structure. The first insulating layer has one electronic affinity value while the second insulating layer has a different electronic affinity value. This spatial variation in material properties allows different parts of the diode to perform different functions optimally, resolving the contradiction between responsivity and dynamic resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The MIIM diode configuration enhances responsivity and reduces dynamic resistance, leading to improved performance in absorbing and converting electromagnetic radiation, particularly in infrared and terahertz detection and energy conversion.
Implementation Method 1
an antenna adapted to absorb the incident electromagnetic radiation
Implementation Method 2
The diode A20 rectifies the AC electrical signal, then the DC filter A2 keeps only the DC component
Implementation Method 3
the transit time of electrons by tunneling, through the thin insulating layer of the diode
Implementation Method 4
Electrons can cross the energy barrier by different conduction mechanisms, for example by Fowler-Nordheim tunneling or by direct tunneling
Implementation Method 5
A DC filter A2 is generally connected in parallel with the diode A20 to keep only the DC component of the rectified AC signal
Data Source
Figure 1A~1C
Figure 2A~2C
Figure 3A~3B
AI summary
The invention relates to a rectifier device 1 with a diode 20 of the MIIM type coupled to an antenna 10, in which the diode 20 has a semiconductor layer 23 of graphene G located between the first and second insulating layers 22, 24 of the MIIM diode, and in which the first metallic layer 21 of the MIIM diode is made of a first metal M1 having an output work ΨM1 less than or equal to the output work ΨG of the graphene G.