Graphene Oxide Semiconductor Heterojunction Fabrication
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Solution Overview
Problem
Current methods for preparing graphene devices, such as mechanical exfoliation, chemical reduction, and CVD, face challenges like poor electrical properties, limited substrate options, and non-uniform graphene layers, along with complications in transferring graphene onto oxide or semiconductor substrates, leading to defective interfaces in devices.
Innovation Solution
A method involving direct graphene vapor deposition onto thin films, nanowires, nanotubes, or nanoparticles, followed by doping to convert graphene into a p-type or n-type semiconductor, using chemical vapor deposition and plasma treatment to form Schottky junction and p-n heterojunction devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If graphene is prepared by mechanical exfoliation, chemical reduction, or epitaxial method, then graphene can be obtained, but the electrical properties are poor and substrate options are limited
Solution Approach 1:
The patent changes the preparation parameters by using CVD method with controlled temperature (900-1000°C), pressure (760-1000 Torr), and carbon source flow rates to grow high-quality graphene with excellent electrical properties directly on desired substrates, resolving the contradiction between electrical performance and substrate versatility
Solution Approach 2:
The invention makes the graphene preparation process universal by enabling direct growth on multiple substrate types including oxides, semiconductors, and metals, eliminating the need for transfer processes and expanding substrate options while maintaining high electrical quality
2Area of stationary object
If CVD method is used to prepare graphene on metal substrate, then large-area graphene can be obtained, but the process becomes complicated and interface defects occur during transfer
Solution Approach 1:
The patent extracts the problematic transfer step from the process by growing graphene directly on the final substrate, eliminating the intermediate metal substrate and transfer operations that cause interface defects and process complexity, while still achieving large-area coverage
Solution Approach 2:
The invention uses the desired oxide or semiconductor substrate itself as the growth medium instead of using a metal substrate as an intermediary, thereby eliminating the need for transfer processes and reducing interface defects
3Manufacturing precision
If graphene is grown directly on oxide or semiconductor substrate, then interface quality improves, but the graphene layer becomes non-uniform
Solution Approach 1:
The patent optimizes CVD parameters including temperature (900-1000°C), pressure (760-1000 Torr), and carbon source composition to achieve uniform graphene growth directly on oxide and semiconductor substrates, resolving the contradiction between interface quality and layer uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the fabrication of high-quality graphene/oxide semiconductor devices with improved electrical characteristics and simplified processes, reducing defects and enhancing device performance by growing graphene directly on substrates and modifying it into semiconductors.
Implementation Method 1
graphene vapor-deposited directly on thin films, nanowires, nanotubes, nanobelts or nanoparticles
Implementation Method 2
applying a dopant such that the graphene is converted into a p-type or n-type semiconductor
Data Source
AI summary
The present invention provides methods of making junction devices, such as, fabrication methods. In certain embodiments, the junction device is a graphene/oxide semiconductor Schottky junction device or graphene/oxide semiconductor p-n heterojunction device. In certain instances, the Schottky junction device comprises graphene vapor-deposited directly on thin films, nanowires, nanotubes, nanobelts or nanoparticles, while the p-n heterojunction device is manufactured by doping the graphene of the Schottky junction device.