Graphene Pellicle for EUV Lithography Mask Protection
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Solution Overview
Problem
Current EUV lithography technologies face challenges in manufacturing effective pellicles for EUV masks due to the short wavelength of EUV radiation, which causes traditional pellicle membranes to absorb radiation, deform, and reduce energy transmission, making it difficult to produce them on a large scale without defects like wrinkles and breakages.
Innovation Solution
A novel process for creating a graphene pellicle membrane using a graphene layer, supported by a nickel layer and an amorphous silicon layer, which is then converted to a silicon oxide layer, allowing for the production of a thin, strong, and wrinkle-free membrane that can efficiently transmit EUV radiation without deformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional pellicle membranes are used to protect EUV mask surfaces, then mask protection is improved, but EUV radiation absorption increases causing heat deformation and energy loss
Solution Approach 1:
The patent changes the material parameter from traditional pellicle membranes to graphene, which has fundamentally different optical properties. Graphene's unique two-dimensional structure allows it to transmit EUV radiation effectively while providing mechanical protection, resolving the contradiction between protection and energy loss
Solution Approach 2:
The patent uses composite material structure combining graphene layer with support layers (such as silicon oxide). This composite approach provides both the protective function and the optical transparency needed for EUV lithography, eliminating the trade-off between durability and radiation transmission
2Reliability
If traditional pellicle membranes are used for EUV masks, then mask protection is improved, but manufacturing precision deteriorates due to wrinkles and breakages
Solution Approach 1:
The patent changes the material from traditional membranes to graphene, which has superior mechanical properties including high strength and flexibility. These parameter changes enable the pellicle to be manufactured without wrinkles and breakages, achieving both protection and manufacturing precision
Solution Approach 2:
The patent employs graphene as an ultra-thin film that can conform to the mask surface without forming wrinkles. The flexible nature of graphene allows it to be transferred and mounted on EUV masks while maintaining a smooth, defect-free surface essential for high-precision lithography
3Use of energy by moving object
If graphene pellicle membrane is used to protect EUV masks, then EUV radiation transmission is improved, but device complexity increases due to additional layers
Solution Approach 1:
The patent extracts only the essential protective function from traditional complex pellicle structures and implements it through a simplified graphene-based design. By removing unnecessary layers and components, the patent achieves high EUV transmission while reducing overall structural complexity
Solution Approach 2:
The patent uses an ultra-thin graphene film that provides protection with minimal added complexity. The thin-film approach eliminates the need for thick, multi-layer traditional pellicles, thereby improving EUV transmission and simplifying the overall device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The graphene pellicle membrane reduces imaging defects and prolongs the life of EUV masks by maintaining a smooth, defect-free surface, enabling efficient EUV radiation transmission and large-scale production while minimizing wrinkles and breakages.
Implementation Method 1
depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer
Data Source
AI summary
A method includes depositing a first material layer over a first substrate; and depositing a graphene layer over the first material layer. The method further includes depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.