Graphene Photon Emitter-Detector FET for High-Resolution Sensing
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Solution Overview
Problem
Existing photon detector systems require separate components for emission and detection, limiting their resolution and efficiency in applications such as imaging and biometric monitoring.
Innovation Solution
A graphene-based field-effect transistor apparatus that can switch between photon emission and detection modes by configuring the semiconductive and conductive layers, allowing the same active material to function as both an emitter and a detector depending on the applied electric field.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If separate components are used for photon emission and detection, then device functionality is achieved, but spatial resolution is limited due to the need for discrete packaging
Solution Approach 1:
The patent merges the photon emitter and detector into a single integrated device by combining an electroluminescent layer and a photodetector layer within the same structure. This allows the device to both emit and detect photons without requiring separate discrete components, thereby improving spatial resolution while maintaining full functionality.
Solution Approach 2:
The integrated device structure enables a single apparatus to perform multiple functions - both photon emission through the electroluminescent layer and photon detection through the photodetector layer. This multi-functionality eliminates the need for separate emitter and detector components, directly addressing the spatial resolution limitation.
2Device complexity
If separate components are used for photon emission and detection, then device functionality is achieved, but the number of components increases
Solution Approach 1:
By combining the electroluminescent and photodetector layers into a single integrated structure, the patent reduces the total number of discrete components that would otherwise need to be separately packaged and assembled. This merging simplifies the manufacturing process while maintaining both emission and detection capabilities.
3Device complexity
If the same material is used for both emission and detection, then component count is reduced, but operational mode switching is required
Solution Approach 1:
The patent employs dynamic control of the electric field to switch between emission and detection modes. By adjusting the polarity and magnitude of the applied voltage, the device can dynamically transition between operating as an electroluminescent emitter or a photodetector, enabling flexible operational control despite using integrated layers.
Solution Approach 2:
The device utilizes parameter changes in the applied electric field to control operational mode. By varying voltage polarity and magnitude, the system switches between emission and detection functions, allowing the same physical structure to perform different roles based on electrical parameter adjustment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-resolution imaging and efficient biometric parameter monitoring by integrating photon emission and detection capabilities into a single apparatus, reducing the need for separate components and improving spatial resolution.
Implementation Method 1
in a first mode of operation the active material acts as a photon emitter... in the first mode of operation an electric field is applied between the semiconductive layer and the conductive layer
Implementation Method 2
in a second mode of operation the active material acts as a photon detector
Data Source
AI summary
A single device for emitting and detecting photons. The device comprises a semiconductive layer (3), active material (5), further dielectric layer (17) and overlying electrode (25). In a first mode of operation an electrical field is applied between the semiconductive layer (3) and the overlying electrode (25). This enables photons to be emitted from the active material (5). In a second mode of operation, the semiconductive layer (3) constitutes a channel of a field effect transistor (23). The field effect transistor further comprises source electrode (11), drain electrode (15), gate electrode (13) and dielectric layer (19). Photons absorbed by the active material (5) causes charge to be transferred to the semiconductor layer (3), thereby changing the channel resistance. A plurality of such devices can be arranged in a configurable array.