Graphene Quantum Dot Hardmask for Semiconductor Etching
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Solution Overview
Problem
Conventional methods for preparing graphene quantum dots are limited by high-temperature, high-pressure conditions, which make it difficult to control reaction time and size distribution, leading to high costs and low yield, and existing hardmask materials face challenges in maintaining chemical and thermal resistance during etching processes in semiconductor manufacturing.
Innovation Solution
A method for preparing graphene quantum dots using a polyaromatic hydrocarbon compound and an organic solvent at atmospheric pressure and temperatures of 250° C or less, resulting in high-purity, monodisperse dots with improved etching resistance when integrated into a hardmask composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional high-temperature, high-pressure methods are used to prepare graphene quantum dots, then the reaction can proceed, but the reaction time control becomes difficult and the size distribution increases
Solution Approach 1:
The patent changes the temperature parameter from high-temperature (conventional methods) to low-temperature (250°C or less) conditions, and changes the pressure parameter from high-pressure to atmospheric pressure. This parameter transformation enables precise control of reaction time and produces monodisperse graphene quantum dots with narrow size distribution, directly resolving the contradiction between manufacturing precision and temperature requirements.
2Productivity
If conventional high-temperature, high-pressure methods are used to prepare graphene quantum dots, then the reaction can proceed, but the yield becomes low and cost increases
Solution Approach 1:
The patent transforms the reaction conditions from high-temperature, high-pressure to low-temperature (250°C or less), atmospheric pressure conditions. This parameter change enables the reaction to proceed efficiently with better controllability, resulting in high yield of graphene quantum dots and reduced energy consumption, simultaneously improving productivity and reducing energy use.
3Reliability
If the heights of photoresist layer and hardmask pattern are increased for etching, then etching performance improves, but the hardmask pattern may be damaged during etching
Solution Approach 1:
The patent develops a hardmask composition that is a composite material formed from graphene quantum dots dispersed in a solvent. This composite structure provides both the necessary height for etching and the chemical/thermal resistance to prevent damage during etching processes, resolving the contradiction between etching resistance and pattern integrity through material composition rather than geometric dimensions alone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for controlled synthesis of graphene quantum dots with reduced molecular weight distribution and increased yield, enhancing the stability and etching resistance of the hardmask, thereby improving semiconductor pattern formation and device performance.
Implementation Method 1
reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250° C. or less
Data Source
AI summary
Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250° C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.