Graphene Semiconductor Integration on Common Substrate
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Solution Overview
Problem
The existing methods for manufacturing graphene devices require expensive silicon carbide substrates and involve transferring graphene layers, which are fragile and prone to performance degradation when moved, leading to increased production costs and reduced performance.
Innovation Solution
Forming a graphene precursor on a common semiconductor substrate, followed by growing a graphene layer and integrating a semiconductor device on the same substrate, eliminating the need for additional substrates and reducing the risk of performance degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If graphene devices are manufactured separately on silicon carbide substrates and then connected to other electronic devices, then high conductivity is achieved, but production costs increase and space occupation increases
Solution Approach 1:
The patent merges the graphene device fabrication with semiconductor device fabrication by forming both on a common semiconductor substrate. The graphene precursor is formed on a first portion of the substrate while semiconductor devices are formed on a second portion, eliminating the need for separate silicon carbide substrates and subsequent connection processes.
2Ease of manufacture
If graphene layer is transferred from copper foil to silicon substrate, then cost is reduced, but graphene structure is affected and performance characteristics are reduced
Solution Approach 1:
The patent applies preliminary action by forming the graphene precursor directly on the common semiconductor substrate before semiconductor device fabrication. This eliminates the need for subsequent transfer operations from copper foil to silicon substrate, preserving graphene structure and performance while reducing production costs.
3Ease of manufacture
If graphene layer is transferred from copper foil to silicon substrate, then cost is reduced, but the amount of space occupied by combined substrates is reduced
Solution Approach 1:
The patent combines multiple substrate functions into a single common semiconductor substrate. Both graphene devices and semiconductor devices are formed on the same substrate, eliminating the need for separate copper foil and silicon substrate, thereby reducing total space occupation.
4Reliability
If silicon carbide substrate is used for graphene layer formation, then high conductivity is achieved, but production cost increases
Solution Approach 1:
The patent makes the common semiconductor substrate multi-functional by using it for both graphene device fabrication and semiconductor device fabrication. This eliminates the need for expensive silicon carbide substrates specifically for graphene, reducing production costs while maintaining high conductivity through proper graphene formation processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for cost-effective and high-performance integration of graphene devices with semiconductor devices on a common substrate, enhancing conductivity and reducing production costs while maintaining the integrity of the graphene layer.
Implementation Method 1
selectively forming a graphene precursor on a first portion of a common semiconductor substrate, forming a graphene layer on the graphene precursor
Data Source
AI summary
A method for producing an electronic device involves forming a graphene precursor on a first portion of a common semiconductor substrate, forming a graphene layer on the graphene precursor, and forming a semiconductor device on a second portion of the common semiconductor substrate.