Graphene Sacrificial Layer for Semiconductor Substrate Removal
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Solution Overview
Problem
The existing methods for removing semiconductor substrates in hybrid type semiconductor elements, such as mechanical polishing and chemical etching, often result in damage to the joint parts and require complex processing, leading to degradation in element yield and increased assembly time.
Innovation Solution
A manufacturing method involving the formation of a graphene layer on a semiconductor substrate, allowing for the direct growth of a semiconductor layer and subsequent easy cutting-off of the substrate at the graphene layer, facilitating simple and damage-free removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If mechanical polishing is used for substrate removal, then the substrate can be removed, but the joint part may be damaged and processing becomes complicated
Solution Approach 1:
The invention introduces a sacrificial layer that segments the substrate structure into removable and non-removable parts. The sacrificial layer acts as a distinct intermediate layer between the substrate and the element portion, allowing selective removal of the substrate while preserving the joint part. This segmentation enables clean separation without mechanical contact with the sensitive joint region.
Solution Approach 2:
The sacrificial layer serves as an intermediary substance between the substrate and the element portion. It facilitates the removal process by providing a chemical pathway for substrate elimination without requiring mechanical polishing that would damage the joint part. The intermediary layer can be selectively etched away, leaving the substrate and element portion separated cleanly.
2Manufacturing precision
If chemical etching is used for substrate removal, then the substrate can be removed, but it requires excessive time and additional mechanical polishing
Solution Approach 1:
The sacrificial layer is formed in advance during the manufacturing process, before substrate removal is needed. This preliminary action creates a pre-configured removal pathway that enables rapid substrate elimination later without requiring time-consuming mechanical polishing or extensive chemical etching procedures.
Solution Approach 2:
The invention replaces mechanical polishing with a chemical removal process targeting the sacrificial layer. Instead of using mechanical force that requires time and generates damage, a chemical etching solution selectively removes the sacrificial layer, achieving substrate separation more efficiently and with less time investment.
3Manufacturing precision
If the semiconductor substrate is present for light receiving, then the light receiving portion can be formed, but incident light is attenuated and detection sensitivity degrades
Solution Approach 1:
The invention extracts or removes the substrate from the final device structure by using a sacrificial layer that can be selectively eliminated. This taking out approach allows the light receiving portion to be formed on the substrate during manufacturing, then the substrate is completely removed to eliminate light attenuation, thereby improving detection sensitivity while maintaining manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables accurate control of semiconductor layer thickness and reduces the risk of damaging the element portion during substrate removal, improving the yield and efficiency of the semiconductor element manufacturing process.
Implementation Method 1
performing cutting-off between the substrate portion and the element portion at the graphene layer
Data Source
AI summary
In order to enable simple removal of a substrate used for manufacturing a semiconductor element, a manufacturing method includes forming a graphene layer on a substrate portion formed of a semiconductor, forming an element portion on the graphene layer, the element portion including a semiconductor layer directly formed on the graphene layer, which takes over crystal information relating to the substrate portion when the semiconductor layer is formed on the substrate portion without intermediation of the graphene layer, and performing cutting-off between the substrate portion and the element portion at the graphene layer.