Graphene Layer Manufacturing via Sputtering and Lithography
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Solution Overview
Problem
Conventional methods for manufacturing graphene require high-temperature processes, long preparation times, and the use of catalysts and corrosive substances, which lead to increased manufacturing costs and substrate deformation.
Innovation Solution
A low-temperature sputtering process is used to form a graphite layer on a substrate, followed by a lithography process to thin it into a graphene layer, eliminating the need for catalysts and corrosives, and reducing processing time and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CVD or chemical methods are used to manufacture graphene, then graphene can be produced, but high temperature (higher than 1000 degrees) and long preparation time are required
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperature (higher than 1000 degrees) to low temperature (not larger than 250 degrees) by using sputtering process. This parameter change enables graphene manufacturing at much lower temperatures while maintaining quality, and significantly reduces preparation time without requiring catalysts or corrosive substances
Solution Approach 2:
The patent replaces chemical reaction processes (CVD, ultrasonic method, electro-chemical method) with a physical sputtering process. This substitution eliminates the need for catalysts and corrosive substances, reduces preparation time, and allows manufacturing at lower temperatures while maintaining graphene quality
2Manufacturing precision
If high temperature process is used in conventional methods, then graphene can be manufactured, but substrate with lower melting point will be melted or deformed
Solution Approach 1:
The patent changes the temperature parameter from high temperature (higher than 1000 degrees) to low temperature (not larger than 250 degrees). This parameter change enables graphene manufacturing at temperatures that do not melt or deform substrates with lower melting points, while still producing high-quality graphene through the sputtering process
3Manufacturing precision
If conventional methods are used, then graphene can be produced, but corrosive substances must be treated prior to discharging, increasing manufacturing procedures and costs
Solution Approach 1:
The patent replaces chemical reaction processes (CVD, ultrasonic method, electro-chemical method) with a physical sputtering process. This substitution eliminates the use of corrosive substances entirely, removing the need for corrosive treatment procedures before discharge. The manufacturing process becomes simpler and more environmentally friendly, reducing both procedures and costs while maintaining graphene quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method shortens production time, reduces manufacturing costs, and produces graphene with fewer defects and a thinner layered structure, as verified by Raman spectrum and electron microscopy analysis.
Implementation Method 1
performing a sputtering process to form a graphite layer on a substrate
Implementation Method 2
performing a lithography process on the graphite layer for thinning the graphite layer
Data Source
AI summary
A method for manufacturing a graphene layer includes performing a sputtering process to form a graphite layer on a substrate, and performing a lithography process on the graphite layer for thinning the graphite layer and thereafter making the graphite layer thinned to become a graphene layer.