Graphene Substrate Pre-Treatment to Preserve k-Value and CH3

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Solution Overview

Problem

Existing methods for forming graphene on non-catalyst substrates at low temperatures often result in physical changes to the substrate, such as increased dielectric constant and reduced CH3 content, which can hinder graphene growth and efficiency.

Innovation Solution

A pre-treatment process using a gas mixture containing a carbon source and hydrogen is applied to the substrate before graphene formation, which helps minimize physical changes to the substrate and promote graphene growth.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a pre-treatment process using hydrogen plasma is applied to the substrate, then the substrate surface is activated and cleaned, but the dielectric constant of the substrate increases and CH3 content decreases, which hinders graphene growth

Engineering Contradiction:
Improvesubstrate surface activation and cleaningVSAvoidsubstrate physical properties (dielectric constant and CH3 content)
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent applies a preliminary pre-treatment process using a mixed gas of carbon source and hydrogen before graphene formation. This preliminary action modifies the substrate surface by depositing carbon-containing species and restoring CH3 groups, which compensates for the excessive cleaning effect of hydrogen plasma and prevents harmful changes to substrate physical properties while maintaining surface activation for graphene growth

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the composition parameters of the pre-treatment gas from pure hydrogen to a mixed gas containing carbon source (such as methane) and hydrogen. This parameter change allows the pre-treatment process to simultaneously activate the substrate surface, deposit carbon species, and restore CH3 content, thereby achieving surface preparation without harmful changes to substrate dielectric constant and CH3 content

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If graphene is directly formed on non-catalyst substrate at low temperature, then the process is simplified and cost reduced, but the substrate undergoes physical changes that reduce graphene growth efficiency

Engineering Contradiction:
Improveprocess simplification and cost reductionVSAvoidgraphene growth efficiency
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The patent introduces a preliminary pre-treatment step using mixed gas (carbon source + hydrogen) before graphene formation. This preliminary action prepares the substrate surface by depositing carbon species and restoring CH3 groups, creating optimal conditions for subsequent graphene growth. This approach maintains the simplicity and low-cost advantage of direct graphene formation on non-catalyst substrates while significantly improving graphene growth efficiency

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent optimizes the pre-treatment gas composition by using a mixed gas containing carbon source and hydrogen, which changes the chemical environment during pre-treatment. This parameter change enables the substrate to undergo beneficial modifications (carbon deposition and CH3 restoration) rather than harmful changes, thereby enhancing graphene growth efficiency while maintaining the low-temperature direct formation process

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The pre-treatment method effectively reduces the change in substrate physical properties, enhances graphene growth, and improves the k-value and CH3 content of the substrate, leading to more efficient graphene formation.

Implementation Method 1

the pre-treatment may include forming a plasma from the pre-treatment gas and exposing the substrate to the plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

the pre-treating the substrate may include forming a plasma from the pre-treatment gas and exposing the substrate to the plasma

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS12217958B2Method of pre-treating substrate and method of directly forming graphene using the same
Publication Date: 2025.02.04 SAMSUNG ELECTRONICS CO LTD
  • US12217958B2 patent drawing
  • US12217958B2 patent drawing
  • US12217958B2 patent drawing

AI summary

A method of pre-treating a substrate on which graphene will be directly formed may include pre-treating the substrate using a pre-treatment gas including at least a carbon source and hydrogen.