Selective Film Deposition Using Graphene Surface Blocking
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Solution Overview
Problem
Existing film formation techniques, such as photolithography and self-assembled monolayers, face challenges in achieving precise selective film formation on semiconductor substrates, particularly in inhibiting film formation on metal surfaces without damaging the underlying metal layers.
Innovation Solution
A film forming method involving the preparation of a substrate with a first and second film, where a graphene-containing film is selectively formed on the second surface, followed by hydrogen-containing plasma processing to modify the graphene film, and finally, a target film is selectively formed on the first surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography or self-assembled monolayer techniques are used for selective film formation, then film formation can be inhibited on certain substrate regions, but the precision and selectivity are insufficient for advanced miniaturization requirements
Solution Approach 1:
A graphene-containing film is introduced as an intermediary layer between the substrate and the target film. This graphene film selectively forms on metal surfaces (second film) and prevents target film formation on those regions, while allowing target film formation on non-metal regions (first film), thereby achieving high-precision selective film formation
Solution Approach 2:
The graphene-containing film exhibits different formation characteristics on different substrate regions - it forms selectively on metal surfaces but not on other surfaces. This local difference in film formation behavior enables precise spatial control over where the target film will subsequently form
2Manufacturing precision
If conventional techniques are used to inhibit film formation on metal surfaces, then some selectivity can be achieved, but damage to the underlying metal layers occurs
Solution Approach 1:
The graphene-containing film serves as a protective intermediary that prevents direct contact between the target film deposition process and the metal underlying layer. By forming this intermediate barrier first, the metal layer is protected from damage while still enabling selective film formation control
Solution Approach 2:
The graphene-containing film is formed in advance before the target film deposition. This preliminary action of forming the graphene layer on metal surfaces prepares the substrate in such a way that subsequent target film formation is prevented on metal regions while protecting the metal from deposition-induced damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise selective formation of a target film on the desired region of the substrate while effectively inhibiting film formation on the second surface, thereby reducing damage to the underlying metal layers and improving selectivity.
Implementation Method 1
performing hydrogen-containing plasma processing on the substrate after forming the graphene-containing film
Implementation Method 2
selectively forming a graphene-containing film on the second surface
Data Source
AI summary
A film forming method includes: preparing a substrate including a first film having a first surface and a second film having a second surface, the second film being different from the first film; selectively forming a graphene-containing film on the second surface; performing hydrogen-containing plasma processing on the substrate after forming the graphene-containing film; and selectively forming a target film on the first surface.