Graphene Contact Switch Cooling for Low-Parasitic TSV Interposers
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Solution Overview
Problem
Conventional through-silicon via (TSV) interconnects in semiconductor devices face challenges such as parasitic capacitance, mechanical stress, and inefficient cooling, which lead to increased power consumption and variability in active device performance.
Innovation Solution
The semiconductor device incorporates an interposer section with TSVs and nanoelectromechanical systems (NEMS) or microelectromechanical systems (MEMS) contact switches with graphene membranes, allowing for thermal connection and disconnection between the active section and the TSVs, thereby reducing parasitic loading and mechanical stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If TSVs are used for cooling, then heat dissipation is improved, but parasitic capacitance increases leading to higher power consumption
Solution Approach 1:
The patent implements dynamically switchable TSV connections using MEMS/NEMS contact switches that can connect or disconnect TSVs from active circuits based on thermal conditions. This dynamic configuration allows the system to activate cooling TSVs only when heat dissipation is needed, thereby reducing parasitic capacitance loading during normal operation while maintaining cooling capability when required.
2Temperature
If TSVs are used for cooling, then heat dissipation is improved, but mechanical stress increases requiring keep-out zones
Solution Approach 1:
The patent segments the TSV functionality by separating cooling TSVs from interconnect TSVs, with cooling TSVs positioned in dedicated regions away from active devices. This segmentation allows cooling TSVs to be placed in locations that minimize mechanical stress on active components, reducing or eliminating the need for keep-out zones while maintaining effective heat dissipation.
3Temperature
If unnecessary TSVs are connected, then cooling capacity is improved, but capacitance loading increases impacting power efficiency
Solution Approach 1:
The patent employs dynamic switching mechanisms that selectively connect or disconnect TSVs based on real-time thermal conditions and circuit requirements. This dynamic control ensures that only the necessary number of TSVs are connected at any given time, optimizing cooling capacity while minimizing parasitic capacitance loading and maintaining power efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces parasitic loading and mechanical stress, improving the efficiency of cooling and power management in semiconductor devices, while minimizing the need for keep-out zones and reducing power consumption.
Implementation Method 1
each contact switch of the one or more contact switches is configured to be switched between a first switching state, in which the graphene membrane of the contact switch is thermally connected to a respective via of the one or more vias
Data Source
Figure 1
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Figure 3a~3b
AI summary
The disclosure relates to the cooling of a semiconductor device. The semiconductor device comprises an active section, an interposer section arranged on the active section, and one or more nanoelectromechanical systems or microelectromechanical systems contact switches arranged between the interposer section and the active section, wherein the interposer section comprises one or more vias, wherein each contact switch of the one or more contact switches comprises a graphene membrane, and wherein each contact switch of the one or more contact switches is configured to be switched between a first switching state, in which the graphene membrane of the contact switch is thermally connected to a respective via of the one or more vias of the interposer section and a second switching stage, in which the graphene membrane of the contact switch is thermally disconnected from the respective via of the one or more vias of the interposer section.