Graphene Thin Film Transistor Active Region Design
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Solution Overview
Problem
Conventional thin film transistors in array substrates, such as those used in display devices, fail to meet performance requirements due to limitations in metal oxide and polycrystalline silicon thin film transistors.
Innovation Solution
A thin film transistor is developed using graphene for the gate, source, and drain electrodes, with an active region composed of doped oxidized graphene, and a gate insulating layer made of oxidized graphene, allowing for reduced electrical resistance, high mobility, and a high on/off ratio without the need for an ohmic contact layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal oxide or polycrystalline silicon thin film transistors are used, then the transistor can be manufactured with conventional processes, but the performance cannot meet the requirements
Solution Approach 1:
The patent changes the material parameters by using graphene and oxidized graphene instead of conventional metal oxide or polycrystalline silicon. This material substitution provides superior electrical performance (higher mobility, lower resistance) while maintaining compatibility with existing thin film transistor manufacturing processes, thus resolving the contradiction between performance and ease of manufacture
Solution Approach 2:
The patent employs a composite structure combining graphene-based materials for electrodes and active regions with oxidized graphene for the gate insulating layer. This composite approach leverages the high conductivity of reduced graphene oxide and the insulating properties of oxidized graphene, achieving high performance while using conventional processing techniques
2Reliability
If graphene is used for electrodes and active region, then electrical resistance is reduced and conductivity is improved, but the complexity of forming precise patterns increases
Solution Approach 1:
The patent applies preliminary patterning to the graphene material before the reduction process. By forming the desired pattern in the oxidized graphene state (which is easier to handle and pattern), and then reducing the entire patterned structure, the method achieves precise pattern formation while maintaining the high conductivity benefits of reduced graphene oxide, thus resolving the contradiction between conductivity improvement and pattern formation precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting thin film transistor exhibits excellent overall performance with low electric resistance, high conductivity, and improved insulating properties, suitable for flexible display devices and array substrates.
Implementation Method 1
the graphene composing the source electrode, the drain electrode and the gate electrode is formed by reducing oxidized graphene
Implementation Method 2
doping the third oxidized graphene material layer, to obtain a doped oxidized graphene material layer
Implementation Method 3
heating to 50° C. to 100° C. so that polymethyl methacrylate penetrates into the third oxidized graphene material layer
Data Source
AI summary
A thin film transistor and a producing method thereof, and an array substrate, which belong to a technical field of the thin film transistor, can solve a problem of poor performance of a conventional thin film transistor. The producing method of the thin film transistor comprises: S1: forming a gate electrode (11) composed of graphene; S2: forming a gate insulating layer (12) composed of oxidized graphene; S3: forming an active region (13) composed of doped oxidized graphene or doped graphene; S4: forming a source electrode (14) and a drain electrode (15) composed of graphene, wherein, the graphene composing the source electrode (14), the drain electrode (15) and the gate electrode (11) is formed by reducing oxidized graphene, and the doped oxidized graphene or doped graphene composing the active region (13) is formed by treating oxidized graphene.