Graphene Transfer via Auxiliary Layer and Opening Etching
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Solution Overview
Problem
Current methods for forming and transferring ultrathin graphene layers, such as those used in semiconductor processing, face challenges like mechanical stress, defect formation, and limited thickness constraints, which hinder the production of high-quality graphene layers with large lateral extensions on dielectric carriers.
Innovation Solution
A method involving the formation of a layer structure with a support layer and a two-dimensional layer, followed by the creation of an auxiliary layer structure that covers and fills openings, allowing for the removal of the support layer while maintaining the graphene layer's position, thereby reducing mechanical stress and enabling thicker support layers for improved etching and defect reduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If typical semiconductor industry processes are used to form thin layers, then the manufacturing process is simple, but the quality and precision of ultrathin layers (nanometer range) cannot be achieved
Solution Approach 1:
The patent introduces a carrier as an intermediary substrate to grow graphene layers. The carrier enables precise control of ultrathin layer formation through its specific surface properties and thickness (1-10 μm), allowing high-precision manufacturing of two-dimensional materials that cannot be achieved with typical semiconductor processes alone.
2Ease of operation
If the support layer is made thinner to transfer the graphene layer, then the transfer process is simpler, but mechanical stress and defect formation increase
Solution Approach 1:
The patent optimizes the support layer thickness parameter to a specific range (1-10 μm, preferably 3-5 μm). This parameter change balances mechanical strength (reducing stress and defects) while maintaining transferability. The controlled thickness ensures the support layer is thin enough for transfer but thick enough to provide mechanical stability.
3Reliability
If the support layer is made thicker to reduce mechanical stress, then the graphene layer quality improves, but the etching process becomes more difficult
Solution Approach 1:
The patent specifies an optimal thickness range (1-10 μm) for the support layer that resolves the contradiction between mechanical strength and etching ease. Within this range, the layer is thick enough to reduce mechanical stress and defects, yet thin enough to allow effective etching access. The patent also specifies material properties (solubility in specific etchants) to further optimize this balance.
Solution Approach 2:
The patent employs composite material selection for the support layer, choosing materials with specific combinations of mechanical properties and chemical etchability. The material is selected to have sufficient strength to reduce defects while maintaining controlled solubility in etchants, creating an optimal composite structure that satisfies both requirements.
4Productivity
If openings are made larger to expose the carrier for etching, then the etching process is more efficient, but the structural integrity of the layer structure is compromised
Solution Approach 1:
The patent applies local quality by creating selective openings in the support layer rather than uniform thinning. The openings are strategically positioned and sized to provide sufficient etchant access (improving efficiency) while leaving the majority of the support layer intact (maintaining structural integrity). This localized modification optimizes both etching efficiency and mechanical strength.
Data Source
AI summary
According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.