Anisotropic Graphite Heat Spreader With Metal Plate Conduction
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Solution Overview
Problem
Conventional semiconductor devices with anisotropic graphite struggle with heat dissipation due to poor thermal conductivity in the Y-axis direction, leading to high thermal resistance and difficulty in effectively dissipating heat generated by semiconductor elements.
Innovation Solution
Incorporating a metal plate between the anisotropic graphite and an insulating member, with bonding layers to enhance heat transfer in the Y-axis direction, allowing heat to be efficiently transferred to the outer edge of the anisotropic graphite and subsequently to a cooler.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a metal plate is added to improve heat transfer, then thermal resistance is reduced, but device complexity increases
Solution Approach 1:
The metal plate serves multiple functions simultaneously: it acts as a heat transfer medium for Y-axis thermal conduction, provides structural support between the anisotropic graphite and insulating member, and maintains mechanical stability of the assembly. This multi-functionality justifies the added component.
Solution Approach 2:
The metal plate functions as an intermediary thermal conduction medium between the anisotropic graphite and the insulating member (or cooler). It bridges the thermal gap in the Y-axis direction, enabling efficient heat transfer without direct contact between graphite and cooler.
2Temperature
If metal plate thickness is increased to improve heat transfer, then thermal resistance decreases, but manufacturing cost and weight increase
Solution Approach 1:
The patent optimizes the metal plate thickness to a specific range (0.2-3.0 mm, preferably 1.5 mm) to achieve the desired thermal performance. This parameter optimization balances heat transfer efficiency with weight and cost considerations, avoiding excessive material usage while maintaining effective thermal conduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces thermal resistance by improving heat transfer in the Y-axis direction, enabling effective heat dissipation from the semiconductor element, with optimal metal plate thickness ranging from 0.2 mm to 3.0 mm, preferably 1.5 mm, for enhanced cooling efficiency.
Implementation Method 1
The anisotropic graphite has one surface to which the semiconductor element is disposed. A direction along the one surface is a c-axis direction of the anisotropic graphite.
Implementation Method 2
The metal plate is made of a metal material, has a plate shape, and is disposed between the anisotropic graphite and the insulating member. The second bonding layer bonds the anisotropic graphite and the metal plate. The third bonding layer bonds the metal plate and the insulating member.
Data Source
AI summary
A semiconductor device includes a semiconductor element, an anisotropic graphite, a first bonding layer, an insulating member, a metal plate, a second bonding layer, and a third bonding layer. The semiconductor element has a chip shape. The anisotropic graphite has one surface to which the semiconductor element is disposed. A direction along the one surface is a c-axis direction of the anisotropic graphite. The first bonding layer bonds the semiconductor element to the one surface of the anisotropic graphite. The insulating member has a plate shape, is disposed across the anisotropic graphite from the semiconductor element, and insulates the anisotropic graphite. The metal plate is made of a metal material, has a plate shape, and is disposed between the anisotropic graphite and the insulating member. The second bonding layer bonds the anisotropic graphite and the metal plate. The third bonding layer bonds the metal plate and the insulating member.