Induction-Heated Graphite Susceptor for Uniform Wafer Temperature

The patent applies local quality by optimizing the electrical resistivity distribution within the graphite base material. Specifically, it controls the standard deviation of electrical resistivity to be 0.005 mΩ·m or less, ensuring that different regions of the susceptor have sufficiently uniform electrical properties. This local uniformity in electrical resistivity directly translates to uniform heat generation and temperature distribution during induction heating, resolving the contradiction between heat generation capability and temperature uniformity.

The patent applies parameter changes by optimizing the electrical resistivity characteristics of the graphite base material. It specifically controls the temperature coefficient of electrical resistivity and the standard deviation of electrical resistivity to ensure predictable and uniform temperature response. This allows the susceptor to rapidly regulate temperature while maintaining precision, as the optimized electrical parameters ensure uniform heat distribution even during rapid heating or cooling cycles, thus improving both productivity and temperature control precision.

The patent applies local quality by ensuring uniform electrical resistivity distribution throughout the graphite base material, with a standard deviation of 0.005 mΩ·m or less. This uniformity prevents localized hot spots and excessive thermal gradients that would create damaging thermal stress. By maintaining consistent electrical properties across the entire susceptor, the patent achieves both rapid temperature responsiveness and enhanced durability, as the uniform heat generation avoids stress concentration that leads to breakage.