Semiconductor Grating Coupler with Embedded Metal Layer

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Solution Overview

Problem

Existing grating couplers in optical transceiver modules face inefficiencies due to optical fiber input tunneling through the semiconductor layer, compromising coupling efficiency.

Innovation Solution

A two-dimensional grating coupler design with scattering elements arranged in an apodized structure and a metal layer embedded between the semiconductor and dielectric layers to reflect tunneled optical signals, improving coupling efficiency by enhancing mode field matching and reducing polarization-dependent loss.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional grating coupler structure is used, then the device complexity is low, but the coupling efficiency deteriorates due to optical tunneling through the semiconductor layer

Engineering Contradiction:
Improvecoupling efficiencyVSAvoidgrating coupler structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The grating coupler is segmented into multiple scattering elements arranged in a two-dimensional pattern with varying dimensions and spacing. This segmentation creates different optical path lengths and phase delays, enabling constructive interference for the desired mode while reducing tunneling effects and improving coupling efficiency to the optical fiber.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The scattering elements exhibit local quality variations through apodization, where the dimensions, spacing, and depth of individual scattering elements are locally optimized. This creates a gradient in scattering strength across the grating structure, enhancing mode field matching at specific locations while maintaining overall coupling efficiency and reducing polarization-dependent loss.

Inventive Principle:
Principle #3Local quality

2Reliability

If the semiconductor layer thickness is reduced to improve coupling, then the tunneling effect worsens and compromises signal integrity

Engineering Contradiction:
Improvesignal integrityVSAvoidsemiconductor layer thickness
Core Design Contradiction:
ReliabilityVSLength of stationary object

Solution Approach 1:

The grating structure is designed to preemptively counteract the tunneling effect by creating destructive interference for tunneling modes through carefully engineered scattering elements. The apodized pattern of scattering elements generates phase differences that cancel out tunneling signals before they can compromise signal integrity, allowing the semiconductor layer to maintain its protective thickness.

Inventive Principle:
Principle #9Preliminary anti-action

3Reliability

If a simple grating pattern is used, then the manufacturing precision requirement is low, but the polarization-dependent loss increases

Engineering Contradiction:
Improvepolarization-dependent lossVSAvoidgrating pattern precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The scattering elements are designed with asymmetric dimensions and orientations to differentially interact with orthogonal polarization modes. This asymmetry, combined with the two-dimensional apodized pattern, creates complementary scattering effects that balance the response for both polarizations, thereby reducing polarization-dependent loss while maintaining manufacturability through standard fabrication tolerances.

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution significantly enhances light coupling efficiency and reduces polarization crosstalk, optimizing the performance of optical transceiver modules for high-speed optical communication systems.

Implementation Method 1

a metal layer embedded between the semiconductor and dielectric layers to reflect tunneled optical signals

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

A two-dimensional grating coupler design with scattering elements arranged in an apodized structure

Methodology Applied
Scientific EffectDiffraction: Diffraction

Implementation Method 3

scattering elements arranged in an apodized structure

Methodology Applied
Scientific EffectScattering: Scattering

Data Source

PatentUS20240411086A1Semiconductor structure and method of fabricating the same
Publication Date: 2024.12.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240411086A1 patent drawing
  • US20240411086A1 patent drawing
  • US20240411086A1 patent drawing

AI summary

A semiconductor structure includes a substrate and a metal layer disposed in the substrate. The semiconductor structure includes a dielectric layer disposed over the metal layer. The semiconductor structure further includes a semiconductor layer disposed over the dielectric layer, where the metal layer extends across the semiconductor layer. The semiconductor layer includes a two-dimensional grating coupler including a plurality of scattering elements disposed in the semiconductor layer and a pair of tapered structures extending laterally from the two-dimensional grating coupler.