Grating Coupler Structure With Reflective Layer for Better Alignment

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Solution Overview

Problem

The coupling efficiency of grating couplers in optical transceiver modules is a critical performance determinant in high-speed optical communication systems, and existing technologies require improvement to meet the demands of communication speeds exceeding 100 Gbps.

Innovation Solution

A semiconductor structure fabrication process involving the formation of grating couplers and waveguides over a dielectric material layer, with an optical reflective layer integrated to enhance coupling efficiency, utilizing a wafer-to-wafer fusion bonding process and lithography-based patterning techniques to optimize the placement and alignment of these components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an optical reflective layer is integrated into the semiconductor structure, then the coupling efficiency of grating couplers is enhanced, but the device complexity and manufacturing process difficulty increase

Engineering Contradiction:
Improvecoupling efficiencyVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The optical reflective layer is integrated within the semiconductor structure by nesting it between the dielectric material layer and the semiconductor substrate, allowing multiple functional layers to be combined in a compact configuration that enhances coupling efficiency without proportionally increasing overall device complexity

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent employs composite material structures by combining the optical reflective layer with dielectric material layers and semiconductor layers to create a multi-layer composite structure that optimizes both optical performance and electrical functionality simultaneously

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If wafer-to-wafer fusion bonding is used to bond the dielectric material layer to the semiconductor substrate, then the alignment precision and coupling efficiency are improved, but the manufacturing process complexity and time increase

Engineering Contradiction:
Improvealignment precisionVSAvoidfabrication time
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The dielectric material layer and semiconductor substrate are prepared with pre-defined bonding surfaces and alignment features before the fusion bonding process, allowing for precise alignment to be achieved more efficiently during the bonding step itself

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces traditional mechanical alignment and bonding methods with wafer-to-wafer fusion bonding, which uses thermal and pressure fields to achieve precise bonding and alignment simultaneously, reducing the number of separate manufacturing steps required

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The integration of an optical reflective layer within the semiconductor structure significantly enhances the coupling efficiency of grating couplers, achieving improved performance in high-speed optical communication systems by optimizing the alignment and interaction between the grating couplers and waveguides.

Implementation Method 1

an optical reflective layer integrated to enhance coupling efficiency

Methodology Applied
Scientific EffectOptical reflection: Reflection

Implementation Method 2

utilizing a wafer-to-wafer fusion bonding process to bond the dielectric material layer to the semiconductor substrate

Methodology Applied
Scientific EffectFusion bonding: Welding

Data Source

PatentUS12164152B2Method of fabricating semiconductor structure
Publication Date: 2024.12.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12164152B2 patent drawing
  • US12164152B2 patent drawing
  • US12164152B2 patent drawing

AI summary

A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.