Group III Nitride Green Light Emitting Diode Barrier Doping
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Solution Overview
Problem
Semiconductor light emitting elements using group III nitride semiconductors face reduced light emission output and internal quantum efficiency when emitting green light due to large deformation in the light emitting layer.
Innovation Solution
A semiconductor light emitting element with a specific structure, including an n-type semiconductor layer, a light emitting layer with multiple quantum well and barrier layers, and a p-type semiconductor layer, where the barrier layers have varying thicknesses and doping, and the well layers have uniform thickness and composition, optimized to enhance light emission output in the green spectrum.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a multiple quantum well structure is used in the light emitting layer to emit green light, then the light emission wavelength can be adjusted to green color, but large deformation occurs in the light emitting layer and internal quantum efficiency is reduced
Solution Approach 1:
The patent applies local quality by creating asymmetric doping in barrier layers: the first barrier layer (adjacent to n-type layer) is doped with n-type impurities while the second barrier layer (adjacent to p-type layer) is doped with p-type impurities. This localized differentiation in doping configuration optimizes carrier distribution and reduces deformation effects specifically in the green light emitting region, thereby improving internal quantum efficiency without compromising wavelength characteristics.
2Illumination intensity
If the light emitting layer is configured for green light emission, then the composition can be adjusted for green wavelength, but light emission output is reduced compared to blue or ultraviolet configurations
Solution Approach 1:
The patent employs parameter changes by systematically varying the doping concentrations and types in different barrier layers. Specifically, the first barrier layer uses n-type doping while the second barrier layer uses p-type doping, creating an optimized electric field distribution that enhances carrier injection and recombination efficiency. This parameter optimization directly increases light emission output for green wavelengths, overcoming the inherent limitations of green light emitting structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described structure improves light emission output and internal quantum efficiency for green light emission, surpassing the performance of comparative examples by optimizing the thickness and doping of barrier and well layers.
Implementation Method 1
a light emitting layer that is laminated on the n-type semiconductor layer and composed of a group III nitride semiconductor, the light emitting layer emitting light having a wavelength of not less than 500 nm and not more than 570 nm by passing a current
Data Source
AI summary
In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a p-type cladding layer containing p-type impurities and laminated on the light emitting layer. The light emitting layer has a barrier layer including first to fifth barrier layers and a well layer including first to fourth well layers, and has a multiple quantum well structure to sandwich one well layer by two barrier layers. The light emitting layer is configured such that the first to fourth well layers are set to have a composition to emit green light, and the first barrier layer is doped with n-type impurities, whereas the other barrier layers are not doped with n-type impurities.