Grooved Composite Substrate Structure to Prevent Cracking
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The mechanical strength of existing composite substrates, such as SOI substrates, is insufficient, leading to cracking and defects during device preparation and use, which affects the performance of semiconductor devices.
Innovation Solution
A composite substrate is designed with a supporting substrate, a patterned buried layer featuring grooves, and a growth substrate that fills these grooves and covers the patterned buried layer, improving mechanical strength and enabling epitaxial preparation of semiconductor structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a conventional composite substrate structure is used, then the substrate can support semiconductor device fabrication, but the mechanical strength is insufficient leading to cracking and defects
Solution Approach 1:
The buried layer is segmented into a patterned structure with multiple grooves instead of a continuous layer. This segmentation creates interlocking regions between the growth substrate and supporting substrate, distributing mechanical stress across multiple points and preventing crack propagation, thereby improving mechanical strength and reducing defects
Solution Approach 2:
The growth substrate is positioned within the grooves of the patterned buried layer, creating a nested configuration where the growth substrate fits into the recesses formed by the buried layer segments. This nesting provides mechanical interlocking and support, enhancing the overall structural strength and reliability of the composite substrate
Data Source
AI summary
Disclosed is a composite substrate, including: a supporting substrate, a patterned buried layer and a growth substrate which are stacked in sequence. The patterned buried layer is provided with a plurality of grooves at a side, away from the supporting substrate, of the patterned buried layer, and the growth substrate is located on the patterned buried layer and fills the plurality of grooves. At least portion of the growth substrate is located in the plurality of grooves, and at least portion of the growth substrate and at least portion of the patterned buried layer are staggered along a direction in which the plurality of grooves are arranged, so that a mechanical strength of the composite substrate is improved. In addition, the growth substrate is used for a subsequent epitaxial preparation of semiconductor devices, thereby improving performances of the prepared devices.