Grooved Light Emitting Element Structure for Leakage Current Control
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Solution Overview
Problem
Current display devices face challenges in enhancing light emission efficiency due to surface defects and leakage currents, which are not effectively addressed by existing technologies.
Innovation Solution
A light emitting element with a groove and protrusion structure on a semiconductor layer, surrounded by an insulating pattern layer, which prevents exposure during etching and ensures stable separation of semiconductor layers, thereby reducing surface defects and increasing light emission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional planar semiconductor layer structure is used, then the manufacturing process is simple, but surface defects and leakage currents occur reducing light emission efficiency
Solution Approach 1:
The semiconductor layer is segmented into multiple distinct components: a first semiconductor layer with groove and protrusion structures, a light emitting layer filling the groove, and a second semiconductor layer. This segmentation creates a structured interface that reduces surface defects and leakage currents while maintaining manufacturing feasibility through sequential deposition processes.
Solution Approach 2:
The invention transitions from a conventional two-dimensional planar interface to a three-dimensional structured interface with grooves and protrusions. The light emitting layer is positioned within the groove at a controlled height, creating vertical dimensionality that increases the effective light emitting area and improves efficiency while the insulating pattern layer provides lateral confinement.
2Ease of manufacture
If the light emitting layer is exposed during etching, then etching can be performed, but surface defects occur reducing reliability
Solution Approach 1:
The insulating pattern layer is formed on the protrusion structure before the etching process. This preliminary action creates a protective mask that prevents the light emitting layer from being exposed during etching, thereby avoiding surface defects while still allowing the etching process to proceed for patterning the semiconductor layers.
Solution Approach 2:
The insulating pattern layer acts as an intermediary protective layer between the etching process and the light emitting layer. It shields the light emitting layer from direct exposure to etchants, preventing surface defects while allowing the etching process to continue for creating the desired device structure.
3Reliability
If semiconductor layers are not properly separated, then manufacturing is simpler, but leakage currents increase reducing light emission efficiency
Solution Approach 1:
The insulating pattern layer serves as an intermediary barrier between the first and second semiconductor layers. It is disposed on the protrusion and surrounds the second semiconductor layer, creating an electrical isolation that prevents leakage currents while maintaining structural integrity and enabling proper layer separation.
Solution Approach 2:
The insulating pattern layer is strategically positioned only on the protrusion structure surrounding the second semiconductor layer, providing localized electrical isolation where it is most needed to prevent leakage currents, while leaving other areas of the device structure unaffected and maintaining overall manufacturing simplicity.
Data Source
AI summary
A light emitting element is capable of increasing light emission efficiency. The light emitting element includes a first semiconductor layer including a groove and a protrusion disposed around the groove, a light emitting layer disposed on the groove of the first semiconductor layer and having a shape corresponding to the groove, a second semiconductor layer disposed on the light emitting layer, and an insulating pattern layer disposed on the protrusion of the first semiconductor layer and surrounding the second semiconductor layer.