Grooved Semiconductor Structure for Breakdown and Leakage Control
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Solution Overview
Problem
Traditional semiconductor power devices face challenges with high-frequency peak voltage surges leading to breakdown failures and high reverse leakage current in Schottky barrier diodes, limiting their reliability and performance.
Innovation Solution
A semiconductor structure is developed with a groove structure formed by a secondary epitaxial semiconductor layer, where the third semiconductor layer has a different conductive type and material than the second layer, and is grown within the grooves, allowing for periodic variations in width and Al component changes, which enhances breakdown voltage and adjusts conduction resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If vertical conductive semiconductor structure is used, then high frequency performance is improved, but breakdown voltage resistance deteriorates due to intensified electric field at groove corners
Solution Approach 1:
The patent applies local quality by creating grooves with specific geometric characteristics (rounded corners, controlled depth and width) in localized regions of the semiconductor layer. This modifies the electric field distribution specifically at the groove corners where field intensification occurs, reducing peak electric field strength locally while preserving the overall vertical conductive structure's high frequency performance.
Solution Approach 2:
The patent introduces a lateral dimension modification by etching grooves into the semiconductor layer, transforming the purely vertical structure into one with lateral features. This dimensional change allows control over electric field distribution through groove geometry (depth, width, corner radius) without compromising the vertical conductivity path, thereby resolving the contradiction between high frequency performance and breakdown voltage resistance.
2Speed
If Schottky barrier diode structure is used, then high frequency performance is improved, but reverse leakage current increases reducing device reliability
Solution Approach 1:
The patent applies local quality by introducing grooves with specific geometric parameters (depth, width, corner radius) into localized regions of the Schottky barrier diode structure. This modifies the electric field and carrier distribution locally at the groove regions, reducing reverse leakage current through field effect control while preserving the overall Schottky barrier's high frequency performance characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure improves the current processing ability of power semiconductors by increasing breakdown voltage, reducing manufacturing time, and enhancing device reliability by automatically adjusting conduction resistance and controlling electric field distribution.
Implementation Method 1
a third semiconductor layer, where a conductive type of the third semiconductor layer is different from that of the second semiconductor layer, a material of the third semiconductor layer is different from that of the second semiconductor layer, and at least a portion of the third semiconductor layer is disposed in the grooves
Data Source
AI summary
A semiconductor structure includes: a first semiconductor layer, including a first surfaces and a second surfaces opposite to the first surface; a second semiconductor layer, disposed on the first semiconductor layer, where a conductive type of the second semiconductor layer is the same as that of the first semiconductor layer, and a doping concentration of the second semiconductor layer is less than that of the first semiconductor layer; grooves, formed in the second semiconductor layer; and a third semiconductor layer, where a conductive type of the third semiconductor layer is different from that of the second semiconductor layer, a material of the third semiconductor layer is different from that of the second semiconductor layer, and at least a portion of the third semiconductor layer is disposed in the grooves.