Grooved Semiconductor Module Layout for High-Power Heat Dissipation
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Solution Overview
Problem
Existing semiconductor packages face challenges in efficiently radiating heat generated by high-power components, leading to instability in thermal and electrical performance due to the close proximity of control semiconductor chips.
Innovation Solution
A semiconductor module design that combines a multilayer insulating substrate with a radiation substrate, featuring a metal pattern to stabilize high power and enhance heat radiation, using a multilayer insulating substrate with insertion grooves and radiation fins for efficient heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If control semiconductor chip is closely disposed to power semiconductor chip, then device integration is improved, but heat radiation efficiency deteriorates
Solution Approach 1:
The substrate is divided into a power element installation region and a control element installation region, with the control element positioned in a groove on the back surface of the substrate. This spatial segmentation allows close integration while maintaining thermal performance by separating the heat-generating power chip from the control chip.
2Power
If thick metal layer is used for high power control, then power stability is improved, but heat radiation efficiency deteriorates
Solution Approach 1:
The substrate exhibits different local properties: the front surface has a thick metal layer (0.1-1.5mm) for stable high power control, while the back surface features a groove structure that enhances heat radiation. This local differentiation allows simultaneous optimization of power stability and thermal performance in different regions.
3Ease of manufacture
If control semiconductor chip is installed on front surface, then manufacturing is simplified, but heat radiation is hindered
Solution Approach 1:
Instead of installing the control semiconductor chip on the front surface with the power chip, the control chip is inverted and installed on the back surface of the substrate in a groove. This inversion allows the control chip to be positioned away from the heat-generating power chip while maintaining electrical connectivity through the substrate, thereby improving heat radiation efficiency without significantly complicating manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design ensures stable electrical and structural integrity by effectively managing high power and heat, enhancing thermal conductivity and radiation efficiency.
Implementation Method 1
heat radiation may not be efficiently performed due to the control semiconductor chip which is closely disposed so that thermal stability or electrical stability may be hardly secured
Data Source
AI summary
Provided is a semiconductor module including: a multilayer insulating substrate comprising at least two metal layers which are insulated from each other and an insertion groove to which at least one first semiconductor component is inserted, wherein one surface or the other surface of the at least one first semiconductor component is electrically connected to the metal layers by using a bonding layer interposed therebetween; an insulating material which surrounds at least two surfaces of the first semiconductor component in the insertion groove; radiation substrates which are electrically or structurally bonded to one surface or the other surface of the at least one first semiconductor component; and at least one second semiconductor component which is installed on an upper surface, a lower surface, or both upper and lower surfaces of the multilayer insulating substrate, wherein a depth of the insertion groove is greater than a depth of the first semiconductor component. Accordingly, high power may be controlled and heat generated by high power may be radiated.