Grooved SOI Substrate Structure for Better Heat Dissipation
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Solution Overview
Problem
Devices using silicon substrates on insulation layers suffer from poor heat-dissipation, leading to excessive heat accumulation and a decline in saturation-region drain current, as well as changes in breakdown voltage due to backside bias effects.
Innovation Solution
A substrate structure is designed with grooves on the base substrate that penetrate at least one part of the base substrate, varying in depth and opening width, to enhance heat-dissipation performance. This structure includes a base substrate, an insulation layer, and a growth substrate, with optional features such as a superjunction structure and a heat-dissipation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a silicon substrate is used on an insulation layer (SOI structure), then the mechanical support and structural stability are improved, but the heat-dissipation performance deteriorates leading to excessive heat accumulation
Solution Approach 1:
The base substrate is segmented by forming multiple grooves that penetrate through it, dividing the continuous substrate into separated regions. This segmentation creates heat dissipation channels that allow heat to escape from the insulation layer, resolving the heat accumulation problem while maintaining the overall structural integrity of the substrate
Solution Approach 2:
The base substrate is transformed into a porous structure by forming grooves that penetrate through it. These grooves act as voids or pores that facilitate heat dissipation pathways, allowing heat to conduct through the grooves and dissipate more effectively while the remaining substrate material continues to provide mechanical support
2Temperature
If grooves are formed in the base substrate to improve heat dissipation, then the heat-dissipation performance is improved, but the structural strength may deteriorate
Solution Approach 1:
The grooves are formed with varying depths and opening widths rather than being uniform throughout. This local quality variation allows the substrate to maintain structural strength in critical areas while providing adequate heat dissipation pathways in other areas, balancing both requirements
Solution Approach 2:
The grooves exhibit asymmetric characteristics with different depths and opening widths, rather than being symmetric and uniform. This asymmetry allows optimization of heat dissipation in specific regions while preserving structural integrity in load-bearing regions, resolving the contradiction between heat dissipation and strength
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The substrate structure effectively improves heat-dissipation performance, preventing excessive heat accumulation and maintaining the integrity of saturation-region drain current, while also mitigating the impact of backside bias effects on breakdown voltage.
Implementation Method 1
grooves in a side of the base substrate away from the growth substrate, where the grooves penetrate at least one part of the base substrate... effectively improves heat-dissipation performance
Data Source
AI summary
The present disclosure provides a substrate structure, a semiconductor structure, and a method of manufacturing the substrate structures. The substrate structure includes: a base substrate, an insulation layer and a growth substrate on the base substrate in sequence; a groove provided on a side of the base substrate away from the growth substrate, where the groove penetrates at least one part of the base substrate. The present disclosure can improve the heat-dissipation performance of the substrate structure.