Grooved Semiconductor Substrate for Repeated Etch and Film Testing

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Solution Overview

Problem

Existing semiconductor wafers used for evaluating and measuring film formation and etching processes lack sufficient surface area and are prone to deformation and warpage during repeated use, making them inefficient for continuous testing and processing.

Innovation Solution

The semiconductor wafer is designed with grooves and depressions on its surface, which increase the surface area and are supported by partition walls to prevent deformation, allowing for continuous film formation and etching without significant changes in surface area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Duration of action of stationary object

If a conventional semiconductor wafer is used for repeated film formation and etching processes, then the wafer can be used multiple times, but the surface area decreases and warpage occurs due to deformation

Engineering Contradiction:
Improvenumber of times the wafer can be usedVSAvoidsurface area of the wafer
Core Design Contradiction:
Duration of action of stationary objectVSArea of stationary object

Solution Approach 1:

The patent introduces grooves with depressions on the wafer surface, transforming the flat two-dimensional surface into a three-dimensional structure with increased surface area. The grooves extend in the depth direction and include depressions that further increase the effective surface area for film formation and etching processes, allowing the wafer to maintain sufficient surface area over multiple uses

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The wafer surface is segmented into multiple regions including grooves and flat regions. The grooves are divided into multiple segments extending in different directions, creating a structured surface that increases total surface area while the flat regions provide stable support areas that prevent overall wafer deformation during repeated processing

Inventive Principle:
Principle #1Segmentation

2Productivity

If a conventional semiconductor wafer is used for repeated processing, then it can be reused, but deformation and warpage occur making it inefficient for continuous testing

Engineering Contradiction:
Improveefficiency of continuous testing and processingVSAvoidstructural stability of the wafer
Core Design Contradiction:
ProductivityVSStability of the object's composition

Solution Approach 1:

The wafer is segmented into grooves and flat regions, where the flat regions act as stable support structures that prevent warpage and deformation. This segmentation allows the wafer to maintain structural stability while the grooved regions provide increased surface area for processing, enabling continuous efficient testing

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the wafer have different local qualities: the grooved regions provide high surface area for film formation and etching, while the flat regions provide structural stability and resistance to deformation. This local differentiation allows the wafer to simultaneously achieve high productivity and structural stability

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12532515B2Semiconductor substrate, method of manufacturing semiconductor device, and method of manufacturing semiconductor substrate
Publication Date: 2026.01.20 KIOXIA CORP
  • US12532515B2 patent drawing
  • US12532515B2 patent drawing
  • US12532515B2 patent drawing

AI summary

A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.