Ground Plane Shielding for Fuse Memory Noise Isolation
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Solution Overview
Problem
Existing RFICs face issues with incorrect information being written into the fuse due to unwanted noise interference, which affects the proper functioning of the RF signal processing unit.
Innovation Solution
The electronic circuit device incorporates a plane conductor connected to a fixed potential, positioned between the wiring conductor and the memory, to block noise and prevent erroneous writing to the write-once memory.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the first wiring conductor connects the communication control unit and the external connection terminal, then data communication is enabled, but unwanted noise is emitted from the external connection terminal and first wiring conductor
Solution Approach 1:
A plane conductor connected to a fixed potential (ground) is introduced as an intermediary between the first wiring conductor and the memory. This ground plane acts as a mediator that provides a reference potential and blocks noise propagation from the external connection terminal to the memory, thereby resolving the contradiction between enabling data communication and preventing noise interference.
Solution Approach 2:
The harmful noise emitted by the external connection terminal and first wiring conductor is converted into a beneficial arrangement by strategically placing the ground-connected plane conductor. The noise energy is diverted to the ground plane, which dissipates it harmlessly, while the memory remains protected. This transforms the harmful noise emission into an opportunity to implement effective noise shielding.
2Reliability
If the plane conductor is arranged between the first wiring conductor and the memory, then noise propagation to the memory is suppressed, but the device structure becomes more complex
Solution Approach 1:
The plane conductor serves multiple functions simultaneously: it provides a ground reference potential, blocks noise propagation to the memory, and acts as an electromagnetic shield. By consolidating these functions into a single structural element within the wiring layer, the design achieves effective noise suppression without proportionally increasing device complexity.
3Device complexity
If the first wiring conductor overlaps the memory in the stacking direction, then the wiring layout is simplified, but noise interference to the memory increases
Solution Approach 1:
The ground-connected plane conductor is positioned between the first wiring conductor and the memory, serving as an intermediary that blocks electromagnetic coupling. This allows the first wiring conductor to overlap the memory for layout simplicity while the ground plane prevents noise interference, thus resolving the contradiction between wiring layout simplicity and noise interference prevention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses noise propagation to the memory, ensuring accurate data writing and reducing the size of the circuit device while maintaining RF signal integrity.
Implementation Method 1
The plane conductor is arranged in between the first wiring conductor and the memory and is connected to a fixed potential. Even in the case where unwanted noise is emitted from the external connection terminal and the first wiring conductor, such noise can be blocked by the plane conductor.
Data Source
AI summary
A semiconductor substrate includes a fuse memory that is a write-once memory, a control unit that writes and reads data to and from the fuse memory, and a digital. A wiring layer includes a wiring conductor that connects the digital and an external connection terminal and a plane conductor provided in between the wiring conductor and a surface of the semiconductor substrate. The wiring conductor overlaps the fuse memory when the wiring conductor and the fuse memory are seen in a stacking direction in which the semiconductor substrate and the wiring layer are stacked on top of each other. The plane conductor is arranged in between the wiring conductor and the fuse memory and is connected to a ground potential.