Ground Ring Extension Structure for Edge Plasma Control
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in controlling plasma on the edge region and reducing leakage of RF and DC power, which affects the uniformity and efficiency of etching and deposition processes.
Innovation Solution
The substrate processing apparatus includes a chuck, insulator ring, focus ring, and ground ring configuration with specific height and positional relationships to control plasma and reduce power leakage, utilizing a ground ring with a lower top surface and extension ring to enhance power transfer to the focus ring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional ground ring configuration is used, then the structure is simple, but plasma control on the edge region is poor and power leakage occurs
Solution Approach 1:
The ground ring is divided into two distinct parts: a ground ring body and an extension ring. The extension ring protrudes upward to bridge the gap between the ground ring and the focus ring, creating a segmented structure that improves plasma control on the edge region while reducing power leakage. This segmentation allows each part to serve its specific function optimally.
Solution Approach 2:
The extension ring adds a vertical dimension to the ground ring structure by protruding upward toward the focus ring. This dimensional change creates a more effective electromagnetic shielding path and improves the coupling between the ground ring and focus ring, thereby enhancing plasma control without significantly increasing horizontal complexity.
2Productivity
If power is applied to the chuck for plasma generation, then etching and deposition processes can be performed, but RF and DC power leakage occurs affecting process uniformity
Solution Approach 1:
The extension ring acts as an intermediary component between the ground ring and the focus ring. It provides an additional electromagnetic shielding path and improves power transfer efficiency by reducing the gap between these components. This intermediary structure minimizes RF and DC power leakage, ensuring that power is delivered efficiently to where it is needed for the etching and deposition processes.
3Loss of energy
If the ground ring is positioned closer to the chuck, then power leakage is reduced, but plasma control on the edge region deteriorates
Solution Approach 1:
By segmenting the ground ring into a ground ring body and an extension ring, the structure can simultaneously achieve close positioning to the focus ring (reducing power leakage) while maintaining proper spacing from the chuck (preserving plasma control). The extension ring specifically targets the gap between the ground ring and focus ring without interfering with the chuck-substrate assembly.
Solution Approach 2:
The extension ring provides localized electromagnetic shielding and power transfer enhancement specifically in the region between the ground ring and focus ring. This local quality improvement addresses power leakage without globally altering the ground ring-chuck spacing, thereby preserving plasma control on the edge region while reducing power losses.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows precise control of plasma on the edge region, increasing etching yield and deposition uniformity by minimizing power leakage, thereby improving process efficiency.
Implementation Method 1
a substrate processing apparatus capable of controlling plasma on an edge region
Implementation Method 2
controlling plasma on the edge region and reducing leakage of radio-frequency (RF) power
Implementation Method 3
reducing leakage of radio-frequency (RF) power applied to a chuck
Implementation Method 4
reducing leakage of direct-current (DC) power applied to a focus ring
Data Source
AI summary
Disclosed are substrate processing apparatuses and methods. The substrate processing apparatus comprises a chuck that supports a substrate, an insulator ring that surrounds the chuck, a focus ring on the insulator ring, and a ground ring outside the insulator ring. The ground ring includes a ground ring body and an extension ring on the ground ring body. A width of the extension ring is less than that of the ground ring body. An inner lateral surface of the extension ring is more outwardly than that of the ground ring body. A difference in level between a top of the extension ring and a top surface of the chuck is in a range of about 52 mm to about 60 mm.