Grounded Epitaxial Memory Structure for Floating Body Suppression
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Solution Overview
Problem
Conventional semiconductor memory devices suffer from potential floating properties of epitaxial silicon in field effect transistors, leading to increased leakage current, unsaturated characteristics, and unstable device operation, which can result in chip failures or burnout due to rapid drain current increase and reduced breakdown voltage.
Innovation Solution
A semiconductor structure is designed with a grounding structure wrapping one end of the epitaxial structure, a columnar capacitor structure wrapping the other end, a bit line structure surrounding the epitaxial structure between the grounding and columnar capacitor structures, and a word line structure surrounding the epitaxial structure between the bit line and columnar capacitor structures, effectively grounding the epitaxial structure to prevent charge accumulation and floating body effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the epitaxial structure is not grounded, then the device can maintain its floating properties for potential body effect, but charge accumulation occurs leading to increased leakage current and device instability
Solution Approach 1:
The grounding structure acts as an intermediary element between the epitaxial structure and the substrate. It provides a controlled path to ground that prevents charge accumulation while maintaining the necessary floating properties for proper device operation. The grounding structure mediates the interaction between the epitaxial layer and the substrate, allowing selective grounding to prevent harmful charge buildup without compromising device functionality.
Solution Approach 2:
The invention extracts the grounding function from the substrate by introducing a separate grounding structure that wraps around the epitaxial structure. This allows the epitaxial structure to be grounded selectively at specific locations without completely grounding the entire device, thereby removing the harmful floating body effect while preserving necessary device characteristics.
2Speed
If the drain voltage is increased to improve drive capability, then the transistor can switch faster, but avalanche multiplication occurs causing rapid current increase and potential burnout
Solution Approach 1:
The grounding structure provides beforehand cushioning by establishing a controlled grounding path before high drain voltages are applied. This pre-established grounding path prevents runaway avalanche multiplication by providing a safe discharge path for accumulated charges, thereby enabling higher drive currents without the risk of burnout or device failure.
Solution Approach 2:
The grounding structure serves as an intermediary protective element between the high-voltage drain terminal and the epitaxial structure. It mediates the voltage stress by providing a controlled path that prevents uncontrolled avalanche multiplication, allowing the drain to operate at high voltages for fast switching without causing harmful current spikes.
3Object-generated harmful factors
If the epitaxial structure is completely grounded, then charge accumulation is prevented, but the floating body effect is eliminated which may impact device performance
Solution Approach 1:
The grounding structure implements local quality by providing grounding only at specific strategic locations around the epitaxial structure rather than complete grounding. This localized grounding prevents charge accumulation and floating body effects at critical interfaces while maintaining the floating properties of the epitaxial structure where needed for proper device operation and performance.
Solution Approach 2:
The grounding structure segments the grounding function into discrete wrapping sections around the epitaxial structure. Instead of complete grounding, the structure is divided into multiple grounding points that selectively remove harmful floating body effects while preserving the overall floating character of the epitaxial layer, thereby maintaining device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the performance and reliability of semiconductor products by preventing tip discharge/leakage phenomena and reducing unsaturated characteristics, thereby enhancing the stability and functionality of semiconductor devices.
Implementation Method 1
a shared epitaxial structure is grounded to prevent charges from accumulating in the epitaxial structure to produce a floating body effect
Implementation Method 2
grounding the epitaxial structure to prevent charges from accumulating in the epitaxial structure to produce a floating body effect, thereby improving the performance and reliability of semiconductor products
Data Source
AI summary
The present disclosure relates to a memory structure and a manufacturing method thereof, and a semiconductor structure. The semiconductor structure includes an epitaxial structure, a grounding structure, a columnar capacitor structure, a bit line structure, and a word line structure. The grounding structure wraps one end of the epitaxial structure in a first direction; the columnar capacitor structure wraps the other end of the epitaxial structure in the first direction; the bit line structure surrounds the epitaxial structure, and is located between the grounding structure and the columnar capacitor structure; and the word line structure surrounds the epitaxial structure, and is located between the bit line structure and the columnar capacitor structure.