Grounded Electrode Supports With Insulating Spacers for DRAM Capacitors
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Solution Overview
Problem
In semiconductor devices, particularly dynamic random access memory (DRAM), the reduction in design rules leads to smaller footprints, which hinders the required capacitance due to the smaller surface area of the capacitor's electrode, necessitating increased dielectric constant materials and contact areas, while also posing challenges in supporting the taller electrodes to prevent tilting or collapse.
Innovation Solution
A semiconductor device design featuring a conductive electrode support connected to ground voltage, with a dielectric layer extending along the profiles of both the electrodes and the support, and insulating spacers to increase capacitance and prevent electrode collapse, while maintaining reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the height of the lower electrode is increased to increase contact area with the dielectric layer, then the capacitance of the capacitor is improved, but the lower electrode may tilt or collapse
Solution Approach 1:
An electrode support structure is introduced as an intermediary element between the lower electrode and the substrate. This support structure provides mechanical stability and prevents the lower electrode from tilting or collapsing, while allowing the electrode to maintain its increased height for greater contact area with the dielectric layer, thus resolving the contradiction between capacitance improvement and electrode stability.
2Productivity
If design rules are reduced to achieve smaller footprint, then integration density is improved, but the surface area of the capacitor's electrode is reduced
Solution Approach 1:
The invention transitions from a two-dimensional planar capacitor design to a three-dimensional vertical structure by increasing the height of the lower electrode. This dimensional change allows the capacitor to maintain sufficient contact area with the dielectric layer even when the footprint is reduced, thereby preserving capacitance while achieving higher integration density through smaller footprints.
3Stability of the object's composition
If a conductive electrode support is used to prevent electrode collapse, then electrode stability is improved, but electrical leakage between adjacent electrodes may occur
Solution Approach 1:
An insulating spacer is introduced as a mediator between the conductive electrode support and the lower electrode. This spacer maintains the structural stability provided by the conductive support while electrically isolating the lower electrode from the support, preventing electrical leakage between adjacent electrodes while preserving the benefits of the conductive support structure.
Data Source
AI summary
A semiconductor device may comprise: a plurality of lower electrodes which are on a substrate; a first electrode support which is between adjacent lower electrodes and comprises a metallic material; a dielectric layer which is on the lower electrodes and the first electrode support to extend along profiles of the first electrode support and each of the lower electrodes; and an upper electrode which is on the dielectric layer.